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Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors

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Semiconductor Interfaces at the Sub-Nanometer Scale

Part of the book series: NATO ASI Series ((NSSE,volume 243))

Abstract

This paper discusses a possible formation mechanism of CuPt-type sublattice ordering for III-III-V type compound semiconductors by taking Ga0.5In0.5P grown on (001)GaAs as an illustrative example. The proposed mechanism relies on: (1) a particular reconstruction (‘step-terrace reconstruction (STR)’ model) on vicinal (001) surface with a misorientation towards [111]B direction, (2) a large contraction of P-P distances of P-P dimers, (3) both bond-length and bond-energy differences between Ga-P and In-P, (4) a steric effect, i.e, surface-atom position dependent atom-adsorption effect and (5) step-flow growth. These assumptions of the mechanism are examined in the light of available experimental results. Sublattice ordering in III-V-V type compounds is also briefly discussed in connection with that for III-III-V type compounds

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References

  • Cao, D. S. Reihlen, E. H., Chen, G. S., Kimball, A. W., and Stringfellow, G. B. (1991), J. Cryst. Growth 109, p279

    Article  CAS  Google Scholar 

  • Chen, G.S., Jaw, D.H. and Stringfellow (1990), Appl. Phys. Lett. 57, p2475

    Article  CAS  Google Scholar 

  • Chen, G.S., Jaw, D.H. and Stringfellow, G.B. (1991), J. Appl. Phys. 69, p4263

    Article  CAS  Google Scholar 

  • Däweritz, L and Hey, R. (1990), Surf. Sci. 236, p15

    Article  Google Scholar 

  • Fuoss, P. H., Kisker, D. W., Renaud, G., Tokuda, K. L., Brennan, S. and Kahn, J. L. (1989), Phys. Rev. Lett. 63, p2389

    Article  CAS  Google Scholar 

  • Gomyo, A. Suzuki, T., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T. (1987), Appl. Phys. Lett. 50, p673

    Article  CAS  Google Scholar 

  • Gomyo, A., Suzuki, T. and Iijima, S.(1988), Phys. Rev. Lett. 60, p2645

    Article  CAS  Google Scholar 

  • Gomyo, A., Kawata, S., Suzuki, T., S. Iijima and Hino, I. (1989a), Jpn. J. Appl. Phys. 28, p L1728

    Article  CAS  Google Scholar 

  • Gomyo, A. (1989b unpublished) The disordered and ordered (Al0.6Ga0.4)0.5In0.5P layers were grown on (001)GaAs with and without Si doping consecutively under the same growth conditions (Tg:660°C, V/III:150) except doping. The NSL in the ordered layer was also CuPt type and the structure is believed to be an alternate (111)B plane alignment of (AlGa) rich plane / In rich plane / (AlGa) rich plane / In rich plane /.... The observed NSL disorder in Si doped AlGaInP possibly occurred by Si-diffusion-enhanced randomization during the growth or by a surface state change due to the doping (Suzuki (1988c)) such as disordering of 2x4 surface reconstruction (Pashley (1991b))

    Google Scholar 

  • Gomyo, A., Suzuki, T., Kobayashi, K., Kawata, S., Hotta, H., and Hino, I. (1991), in Extended Abstracts of the 38th Spring Meeting, the Jpn Society of Applied Physics and Related Societies, Tokyo, 30a-ZG-5 (in Japanese)

    Google Scholar 

  • Horikoshi, Y, Yamaguchi, H., Briones, F. and Kawashima, M. (1990), J. Cryst. Growth 105, p326

    Article  CAS  Google Scholar 

  • Ihm, Y. E., Ohtsuka, N., Klem, J. and Morkoc, H. (1987), Appl. Phys. Lett. 51, p3013

    Article  Google Scholar 

  • Kamiya, L., Aspnes, D. E., Tanaka, H., Florez, L. T., Harbison, J. P., and Bhat, R. (1992), Phys. Rev. Lett. 68, p627

    Article  CAS  Google Scholar 

  • Kobayashi, K., Hino, L., Gomyo, A., Kawata and Suzuki, T. (1987), IEEE J. Quantum Electron. QE-23, p704

    Article  CAS  Google Scholar 

  • Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L. (1985), Phys. Rev. Lett. 54, p201

    Article  CAS  Google Scholar 

  • Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Follstaedt, D.M., Doyle, B.L. (1992), Phys.Rev. B 46, p1909

    Google Scholar 

  • Murgatroyd, I. J., Norman, A. G., Booker, G. R. and Kerr, T. M. (1986), in Imura, T., Maruse, S., and Suzuki, T. (eds.), Proc. 11th Intrn. Congr. on Electron Microscopy, Japan Soc.Electron Microscopy, Tokyo, pp1497–1498

    Google Scholar 

  • Murgatroyd, I.J., Norman, A.G. and Booker, G.R. (1990), J. Appl. Phys. 67, p2310

    Article  CAS  Google Scholar 

  • Ohkouchi, S. (1991), private communication

    Google Scholar 

  • Ogale, S.B., Madhukar, A., Joshi, S.Y. and Viswanathan, R. (1992), J. Vac. Sci. Technol. B10, p1689

    Google Scholar 

  • Osório, R., Bernard, J. E., Froyen, S. and Zunger, A. (1992), J. Vac. Sci. Technol. B10, p1683

    Google Scholar 

  • Pashley, M. D., Haberern, K. W. and Gaines, J. M. (1991a), Appl. Phys. Lett. 58, p406

    Article  CAS  Google Scholar 

  • Pashley, M.D. and Haberern, K.W. (1991b), Phys. Rev. Lett. 67, p2697

    Article  CAS  Google Scholar 

  • Phillips, J. C. (1973), ‘Bonds and Bands in Semiconductors’, Academic Press, New York, ch. 8

    Google Scholar 

  • Qian G.H., Martin, R.M., Chadi, D.J. (1988), Phys. Rev. B38, p7649

    Google Scholar 

  • Quigley, J.H., Hafich, M.J., Lee, H.Y., Stave, R.E. and Robinson, G.Y. (1989), J. Vac. Sci. Technol. B7, p358

    Google Scholar 

  • Shahid, M. A., Mahajan, S. and Laughlin, D. E. (1987), Phys. Rev. Lett. 58, p2567

    Article  CAS  Google Scholar 

  • Suzuki, T., Gomyo, A. and Iijima, S. (1988a), J. Cryst. Growth 93, p396

    Article  CAS  Google Scholar 

  • Suzuki, T., Gomyo, A., Iijima, S., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T. (1988b), Jpn. J. Appl. Phys. 27, p2098

    Article  CAS  Google Scholar 

  • Suzuki, T., Gomyo, A., Hino, I., Kobayashi, K., Kawata, S. and Iijima, S. (1988c), Jpn. J. Appl. Phys. 27, p1549

    Article  Google Scholar 

  • Suzuki, T., Hino, I., Kobayashi, K., Gomyo, A. and Kawata, S. (1989), Optoelectronics-Devices and Technologies, 4, p317, Mita Press

    CAS  Google Scholar 

  • Suzuki, T. and Gomyo, A. (1990), Abstracts for Sixth International Conf. on Molecular Beam Epitaxy, San Diego, USA, paper No. XII-3

    Google Scholar 

  • Suzuki, T. and Gomyo, A. (1991a), J. Cryst. Growth 111, p353. The formation mechanism in this paper (1991a) differs from the 1988’s paper in that the previous one assumed a step height of more than 2 ML and that it did not consider surface reconstruction although it pointed out the importance of the evenness of each terrace-width. In spite of these differences, this paper (1991a) assumed SEMP-1 for the alternate alignment of Ga and In (see Section 4.3-(1) and 4.4))

    Article  CAS  Google Scholar 

  • Suzuki, T. and Gomyo, A. (1991b), in Extended Abstracts of the 38th Spring Meeting, the Jpn. Society of Applied Physics and Related Societies, Tokyo, 30a-ZG-6 (in Japanese)

    Google Scholar 

  • Suzuki, T. and Gomyo, A. (1992), in A. Yoshimori, T. Shinjo and H. Watanabe (eds.), ‘Ordering at Surfaces and Interfaces’, Springer Series in Materials Science, vol 17, Springer-Verlag, Berlin, Heidelberg, pp363–375. This is the Proceedings of the Third NEC Symposium, held at Hakone, Japan, October 7–11, in 1990. In this paper, the formation mechanism of the NSL in III-V-V type compounds has also been briefly discussed

    Google Scholar 

  • Tanimoto, M., to be published in Ultra Microscopy(1992)

    Google Scholar 

  • Tsuda, M., Norishita, M., Oikawa, S. and Mashita, M. (1988), Jpn. J. Appl. Phys. 27, p L960

    Article  CAS  Google Scholar 

  • Ueda, S., Takikawa, M, Komeno, J. and Umebu, I. (1987), Jpn. J. Appl. Phys. 26, p L1824

    Article  CAS  Google Scholar 

  • Ueda, O., Fujii, T., Nakada, Yamada, H. and Umebu, I. (1989), J. Cryst. Growth 95, p38

    Article  CAS  Google Scholar 

  • Xu, C., Caffey, K. P., Burnham, J. S., Goss, S. H., Garrison, B. J. and Winograd, N. (1992), Phys. Rev. B 45, p6776

    Google Scholar 

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Authors and Affiliations

  1. Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba-Shi 305, Japan

    T. Suzuki & A. Gomyo

Authors
  1. T. Suzuki
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  2. A. Gomyo
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Editors and Affiliations

  1. IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland

    H. W. M. Salemink

  2. Philips Laboratories, Briarcliff Manor, New York, USA

    M. D. Pashley

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Suzuki, T., Gomyo, A. (1993). Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_2

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  • DOI: https://doi.org/10.1007/978-94-011-2034-0_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4900-9

  • Online ISBN: 978-94-011-2034-0

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