Abstract
The scanning tunneling microscope (STM) is used to study GaAs pn-doping superlattices, cleaved in ultrahigh vacuum and imaged in cross-section. A comparison is made between results obtained on flat, unpinned surfaces and those from rough, pinned surfaces. In both cases, spectroscopic measurements are used to determine the position of the surface Fermi-level relative to the band edges. Band bending in the GaAs induced by the electric-field from the probe-tip is found to have a significant effect on the spectra, although this effect is diminished on the pinned surfaces thereby simplifying the interpretation of those results. Several other features in the data are discussed in detail, including disorder-induced gap states, and restricted current flow in the bulk GaAs due to the pn-doping structure
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Feenstra, R.M. et al. (1993). Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_14
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DOI: https://doi.org/10.1007/978-94-011-2034-0_14
Publisher Name: Springer, Dordrecht
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