Abstract
Schottky barriers at metal contacts to semiconductors as well as band offsets at heterojunctions are significantly influenced by dipole layers at the interface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described
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© 1993 Springer Science+Business Media Dordrecht
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Williams, R.H., Shen, T.H., Hooper, S. (1993). Dipole Layers at GaAs Heterojunctions and their Investigation. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_12
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DOI: https://doi.org/10.1007/978-94-011-2034-0_12
Publisher Name: Springer, Dordrecht
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