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Intensity-Modulation Characteristics of Laser Diodes

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Laser Diode Modulation and Noise

Part of the book series: Advances in Optoelectronics (ADOP) ((ADOP,volume 3))

Abstract

A laser diode converts electrical into optical signals. Ideally, any change in the injection current would yield an instantaneous change of the emitted optical power.

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References

  1. K. Konnerth and C. Lanza: “Delay between current pulse and light emission of a Gallium Arsenide injection laser”; Appl. Phys. Lett., Vol. 4, pp. 120–121, 1 April 1964.

    Google Scholar 

  2. R. S. Tucker: “Large-signal switching transients in index-guided semiconductor lasers”; Electron. Lett., Vol. 20, pp. 802–803, Sept. 1984.

    Article  Google Scholar 

  3. R. S. Tucker: “High-speed modulation of semiconductor lasers”; J. Lightwave Techn., Vol. LT-3, pp. 1180–1192, Dec. 1985.

    Article  Google Scholar 

  4. T. Ikegami and Y. Suematsu: “Resonance-like characteristics of the direct modulation of a junction laser”; Proc. IEEE, Vol. 55, pp. 122–123, Jan. 1967.

    Article  Google Scholar 

  5. T. L. Paoli and J. E. Ripper: “Direct modulation of semiconductor lasers”; Proc. IEEE, Vol. 58, pp. 1457–1465, Oct. 1970.

    Article  Google Scholar 

  6. M. J. Adams: “Rate equations and transient phenomena in semiconductor lasers”; Opto-Electronics, Vol. 5, pp. 201–215, 1973.

    Article  Google Scholar 

  7. G. Arnold, P. Russer, and K. Petermann: “Modulation of laser diodes”, in ‘Semiconductor devices for optical communication’, H. Kressel, ed.; Springer, Berlin Heidelberg New York, 2nd. edition 1982, pp. 213–242.

    Google Scholar 

  8. P. M. Boers and M. T. Vlaardingerbroek: “Dynamic behaviour of semiconductor lasers”; Electron. Lett., Vol. 11, pp. 206–208, 15th May 1975.

    Article  Google Scholar 

  9. K. Furuya, Y. Suematsu, Y. Sakakibara, and M. Yamada: “Influence of intraband electronic relaxation on relaxation oscillation of injection lasers”; Trans. 1ECE of Japan, Vol. E-62, pp. 241–245, April 1979.

    Google Scholar 

  10. M. J. Adams: “Influence of spectral hole-burning on quaternary laser transients”; Electron. Lett., Vol. 19, pp. 627–628, 4th August 1983.

    Article  Google Scholar 

  11. J. E. Bowers: “Relation between bandwidth and resonance frequency and the determination of bandwidth limitations”; Proc. 10th IEEE Semiconductor Laser Conf., paper M-1, pp. 174–175, Kanazawa, Japan, Oct. 1986.

    Google Scholar 

  12. R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik: “Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers”; Appl. Phys. Lett., Vol. 50, pp. 653–655, 16th March 1987.

    Article  Google Scholar 

  13. R. Olshansky, P. M. Fye, J. Manning, and C. B. Su: “Effect of nonlinear gain on the bandwidth of semiconductor lasers”; Electron. Lett., Vol. 21, pp. 721–722, 28th June 1985.

    Article  Google Scholar 

  14. D. M. Fye, R. Olshansky and V. Lanzisera: “Observation of reduced modulation bandwidth and prediction of bandwidth limit for single frequency lasers”; Proc. 10th IEEE Semiconductor Laser Conf., paper M-5, pp. 182–183, Kanazawa, Japan, Oct. 1986.

    Google Scholar 

  15. C. B. Su, and V. Lanzisera: “Effect of doping on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers”; Appl. Phys. Lett., Vol. 45, pp. 1302–1304, 15th Dec. 1984.

    Article  Google Scholar 

  16. F. Stern: “Calculated spectral dependence of gain in excited GaAs”; J. Appl. Phys., Vol. 47, pp. 5382–5386, Dec. 1976.

    Article  Google Scholar 

  17. K. Y. Lau, and A. Yariv: “Ultra-high speed semiconductor lasers”; IEEE J. Quant. Electron., Vol. QE-21, pp. 121–138, Feb. 1985.

    Google Scholar 

  18. K. Uomi, T. Ohtoshi, and N. Chinone: “Ultra high oscillation frequency (≃ 50 GHz) in modulation doped multiquantum well (MD-MQW) lasers: Theoretical analysis”; Proc. 10th IEEE Int. Semiconductor Laser Conf., paper M-6, pp. 184–185, Kanazawa, Japan, Oct. 1986.

    Google Scholar 

  19. T. Yuasa, T. Yamada, K. Asakawa, and M. Ito: “Very high relaxation oscillation frequency in dry-etched short cavity GaAs/AlGaAs multiquantum well lasers”; Appl. Phys. Lett., Vol. 50, pp. 1122–1124, 27th Apr. 1987.

    Article  Google Scholar 

  20. K. Vahala and A. Yariv: “Detuned loading in coupled cavity semiconductor lasers — effect on quantum noise and dynamics”; Appl. Phys. Lett., Vol. 45, pp. 501–503, 1 Sept. 1984.

    Article  Google Scholar 

  21. R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik: “Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers”; IEEE J. Quant. Electron., Vol. QE-23,pp. 1410–1418, Sept. 1987.

    Google Scholar 

  22. C. B. Su, V. Lanzisera, R. Olshansky, W. Powazinik, E. Meland, J. Schlafer, and R. B. Lauer: “15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under cw-operation at room temperature”; Electron. Lett., Vol. 21, pp. 577–579, 20th June 1985.

    Article  Google Scholar 

  23. K. Kamite, H. Sudo, M. Yano, H. Ishikawa, and H. Imai: “Ultrahigh speed InGaAsP/InP DFB lasers emitting at 1.3 μm wavelength”; IEEE J. Quant. Electron., Vol. QE-23, pp. 1054–1058, June 1987.

    Google Scholar 

  24. F. Furuya, Y. Suematsu, and T. Hong: “Reduction of resonance-like peak in direct modulation due to carrier diffusion in injection laser”; Appl. Opt., Vol. 17, pp. 1949–1952, 15 June 1978.

    Article  Google Scholar 

  25. N. Chinone, K. Aiki, M. Nakamura, and R. Ito: “Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers”; IEEE J. Quant. Electron., Vol. QE-14, pp. 625–631, August 1978.

    Article  Google Scholar 

  26. D. J. Channin: “Effect of gain saturation on injection laser switching”; J. Appl. Phys., Vol. 50, pp. 3858–3860, June 1979.

    Article  Google Scholar 

  27. D. Wilt, K. Y. Lau, and A. Yariv: “The effect of lateral carrier diffusion on the modulation response of a semiconductor laser”; J. Appl. Phys., Vol. 52, pp. 4970–4974, August 1981.

    Article  Google Scholar 

  28. D. J. Channin, D. Botez, C. C. Neil, J. C. Connolly, and D. W. Bechtle: “Modulation characteristics of constricted double-heterojunction AlGaAs laser diodes”; J. Lightwave Techn., Vol. LT-1, pp. 146–161, March 1983.

    Article  Google Scholar 

  29. R. S. Tucker and D. J. Pope: “Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser”; IEEE J. Quant. Electron., Vol. QE-19, pp. 1179–1183, July 1983.

    Article  Google Scholar 

  30. D. J. Channin, D. Redfield, and D. Botez: “Effect of injection current confinement on modulation of CDH-LOC AlGaAs laser diodes”; Proc. 9th Int. Semiconductor Laser Conf., pp. 112–113, Rio de Janeiro, Brazil, August 1984.

    Google Scholar 

  31. T. Ikegami: “Spectrum broadening and tailing effect in directly modulated injection lasers”; Proc. 1st Europ. Conf. on Opt. Comm., pp. 111–113, London, Sept. 1975.

    Google Scholar 

  32. A. Valster, L. J. Meuleman, P. I. Kuindersma, and T. V. Dongen: “Improved high-frequency response of InGaAs: double-channel buried heterostructure lasers”; Electron. Lett., Vol. 22, pp. 16–18, 2nd Jan. 1986.

    Article  Google Scholar 

  33. H. G. Unger: “Elektromagnetische Wellen auf Leitungen”; Huthig, Heidelberg, W. Germany, 1980.

    Google Scholar 

  34. C. E. Zah, J. S. Osinski, S. G. Menocal, N. Tabatabaie, T. P. Lee, A. G. Dentai, and C. A. Burrus: “Wide-bandwidth and high-power 1.3 μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers”; Electron. Lett., Vol. 23, pp. 52–53, 2nd Jan. 1987.

    Article  Google Scholar 

  35. C. Su, V. Lanzisera, W. Powazinik, E. Meland, R. Olshansky, and R. B. Lauer: “12.5 GHz direct modulation bandwidth of vapor phase regrown 1.3 μm InGaAsP buried heterostructure lasers”; Appl. Phys. Lett., Vol. 46, pp. 344–346, 15 Febr. 1985.

    Article  Google Scholar 

  36. J. E. Bowers, B. R. Hemenway, D. P. Wilt, T. J. Bridges, and E. G. Burkhardt: “26.5 GHz-bandwidth InGaAsP constricted mesa lasers with tight optical confinement”; Electron. Lett., Vol. 21, pp. 1090–1091, 7th Nov. 1985.

    Article  Google Scholar 

  37. L. Figueroa, C. W. Slayman, and H.-W. Yen: “High-frequency characteristics of GaAlAs injection lasers”; IEEE J. Quant. Electron., Vol. QE-18, pp. 1718–1727, Oct. 1982.

    Article  Google Scholar 

  38. R. S. Tucker, C. Lin, C. A. Burrus, P. Besomi, and R. J. Nelson: “High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers”; Electron. Lett., Vol. 20, pp. 393–394, 10th May 1984.

    Article  Google Scholar 

  39. R. Olshansky, V. Lanzisera, C. B. Su, W. Powazinik, and R. B. Lauer: “Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth”; Appl. Phys. Lett., Vol. 49, pp. 128–130, 21 July 1986.

    Article  Google Scholar 

  40. J. Schlafer, C. B. Su, W. Powazinik, and R. B. Lauer: “20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links”; Electron. Lett., Vol. 21, pp. 469–471, 23rd May 1985.

    Google Scholar 

  41. J. E. Bowers: “Millimetre-wave response of InGaAsP lasers”; Electron. Lett., Vol. 21, pp. 1195–1197, 5th Dec. 1985.

    Article  Google Scholar 

  42. J. E. Bowers, C. A. Burrus, and R. J. McCoy: “InGaAsP pin photodetector with modulation response to millimetre wave length”; Electron. Lett., Vol. 21, pp. 812–814, 29th August 1985.

    Article  Google Scholar 

  43. K. Petermann: “Theoretical analysis of spectral modulation behaviour of semiconductor injection lasers”; Opt. and Quant. Electron., Vol. 10, pp. 233–242, 1978.

    Article  Google Scholar 

  44. P. R. Selway and A. R. Goodwin: “Effect of dc bias level on the spectrum of GaAs lasers operated with short pulses”; Electron. Lett., Vol. 12, pp. 25–26, 8th Jan. 1976.

    Article  Google Scholar 

  45. F. Mengel and V. Ostoich: “Dynamics of longitudinal and transverse modes along the junction plane in GaAlAs stripe lasers”; IEEE J. Quant. Electron., Vol. QE-13, pp. 359–361, May 1977.

    Article  Google Scholar 

  46. J. Buus and M. Danielsen: “Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser”; IEEE J. Quant. Electron., Vol. QE-13, pp. 669–674, August 1977.

    Article  Google Scholar 

  47. M. Nakamura, K. Aiki, N. Chinone, R. Ito, and J. Umeda: “Longitudinal-mode behaviour of mode-stabilized AlxGa1-xAs injection lasers”; J. Appl. Phys., Vol. 49, pp. 4644–4648, Sept. 1978.

    Article  Google Scholar 

  48. M. R. Matthews and A. G. Steventon: “Spectral and transient response of low-threshold proton-isolated (GaAl)As lasers”; Electron. Lett., Vol. 14, pp. 649–651, 14th Sept. 1978.

    Article  Google Scholar 

  49. M. Danielsen and F. Mengel: “Multimode rate equation description of homogeneous spectral broadening in semiconductor lasers”; Electron. Lett., Vol. 14, pp. 505–507, 3rd August 1978.

    Article  Google Scholar 

  50. S. Tarucha and K. Otsuka: “Response of semiconductor lasers to deep sinusoidal modulation”; IEEE J. Quant. Electron., Vol. QE-17, pp. 810–816, May 1981.

    Article  Google Scholar 

  51. M. Osinski and M. J. Adams: “Computer-simulated transient evolution of 1.55 μm laser spectra”; Proc. 8th Europ. Conf. on Opt. Comm., pp. 169–173, Cannes, France, Sept. 1982.

    Google Scholar 

  52. P.-L. Liu, T. P. Lee, C. A. Burrus, I. P. Kaminow, and J.-S. Ko: “Observation of transient spectra and mode partition noise of injection lasers”; Electron. Lett., Vol. 18, pp. 904–905, 14th Oct. 1982.

    Article  Google Scholar 

  53. D. Marcuse and T. P. Lee: “On approximate analytical solutions of rate equations for studying transient spectra of injection lasers”; IEEE J. Quant. Electron., Vol. QE-19, pp. 1397–1406, Sept. 1983.

    Article  Google Scholar 

  54. K. Y. Lau, C. Harder, and A. Yariv: “Longitudinal mode spectrum of semiconductor lasers under high-speed modulation”; IEEE J. Quant. Electron., Vol. QE-20, pp. 71–79, Jan. 1984.

    Google Scholar 

  55. G. H. B. Thompson: “Physics of semiconductor laser devices”; J. Wiley, Chichester, New York, Brisbane, Toronto, 1980, pp. 451–452.

    Google Scholar 

  56. F. Koyama, Y. Suematsu, S. Arai, and T.-E. Tawee: “1.5–1.6 μm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector”; IEEE J. Quant. Electron., Vol. QE-19, pp. 1042–1051, June 1983.

    Article  Google Scholar 

  57. Y. Suematsu, S. Arai, and F. Koyama: “Dynamic-single-mode lasers”; Optica Acta, Vol. 32, pp. 1157–1173, Sept./Oct. 1985.

    Google Scholar 

  58. T. P. Lee, C. A. Burrus, J. A. Copeland, A. D. Dentai, and D. Marcuse: “Short cavity InGaAsP injection lasers: dependence of mode spectra and single-longitudinal-mode power on cavity length”; IEEE J. Quant. Electron., Vol. QE-18, pp. 1101–1113, July 1982.

    Google Scholar 

  59. G. P. Agrawal: “Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers”; Electron. Lett., Vol. 22, pp. 696–697, 19th June 1986.

    Article  Google Scholar 

  60. G. Arnold, P. Russer, and K. Petermann: “Modulation of laser diodes”; in Topics in Applied Physics, Vol. 39: ‘Semiconductor devices for optical communication’, ed. H. Kressel. Springer, Berlin Heidelberg New York, 2nd edition 1982, pp. 213–242.

    Google Scholar 

  61. R. Tell, S. T. Eng: “8 Gbit/s optical transmission with T. J. S. GaAlAs laser and p-i-n detection”; Electron. Lett. Vol. 16, pp. 497–498, 19th June 1980.

    Article  Google Scholar 

  62. A. H. Gnauck, J. E. Bowers, and J. C. Campbell: “8 Gb/s transmission over 30 km of optical fiber”; Electron. Lett., Vol. 22, pp. 600–602, 22nd May 1986.

    Article  Google Scholar 

  63. J. E. Bowers, C. A. Burrus: “Optoelectronic components and systems with bandwidths in excess of 26 GHz”; RCA-Review, Vol. 46, pp. 496–509, Dec. 1985.

    Google Scholar 

  64. C. Lin and J. E. Bowers: “High-speed large-signal digital modulation of a 1.3 μm InGaAsP constricted mesa laser at a simulated bit rate of 16 Gbit/s”; Electron. Lett., Vol. 21, pp. 906–908, 26th Sept. 1985.

    Article  Google Scholar 

  65. A. H. Gnauck and J. E. Bowers: “16 Gbit/s direct modulation of an InGaAsP laser”; Electron. Lett., Vol. 23, pp. 801–803, 16th July 1987.

    Article  Google Scholar 

  66. K. Nagano, M. Maeda, K. Saito, M. Tanaka, and R. Ito: “Sinusoidal modulation characteristics of buried-heterostructure lasers”; Trans. IECE of Japan, Vol. E-61, pp. 441–445, 1978.

    Google Scholar 

  67. T. Hong and Y. Suematsu: “Harmonic distortion in direct modulation of injection lasers”; Trans. IECE of Japan, Vol. E-62, pp. 142–147, March 1979.

    Google Scholar 

  68. K. Petermann and H. Storm: “Nichtlineare Verzerrungen bei der Modulation von Halbleiterlasern”; Wiss. Ber. AEG-Telefunken, Vol. 52, pp. 238–242, Dec. 1979.

    Google Scholar 

  69. H. Storm: “Rauschen und Klirren beim V-Nut-Laser”; Wiss. Ber. AEG-Telefunken, Vol. 53, pp. 23–26, Sept. 1980.

    Google Scholar 

  70. G. Großkopf and L. Kuller: “Measurement of nonlinear distortions in index- and gain-guiding GaAlAs lasers”; J. Opt. Comm., Vol. 1, pp. 15–17, 1980.

    Article  Google Scholar 

  71. K. Stubkjaer and M. Danieisen: “Nonlinearities of GaAlAs lasers — harmonic distortion”; IEEE J. Quant. Electron., Vol. QE-16, pp. 531–537, May 1980.

    Article  Google Scholar 

  72. H. P. Berger, R. Welter, A. Dill, G. Guekos and H. Melchior: “Tradeoffs between noise, distortion and fibre length for multichannel analogue TV transmission over graded-index fibres at 0.83 μm”; Electron. Lett., Vol. 17, pp. 844–845, 29th Oct. 1981.

    Article  Google Scholar 

  73. T. Hong, Y. Suematsu, S. Chung, and M. Kang: “Harmonic characteristics of laser diodes”; J. Opt. Comm., Vol. 3, pp. 42–48, June 1982.

    Article  Google Scholar 

  74. K. Y. Lau and A. Yariv: “Intermodulation distortion in a directly modulated semiconductor injection laser”; Appl. Phys. Lett., Vol. 45, pp. 1034–1036, 15th Nov. 1984.

    Article  Google Scholar 

  75. T. E. Darcie, R. S. Tucker and G. J. Sullivan: “Intermodulation and harmonic distortion in InGaAsP lasers”; Electron. Lett., Vol. 21, pp. 665–666, 1st August 1985, and Vol. 22, p. 619, 22nd May 1986.

    Article  Google Scholar 

  76. K. E. Simons: “The decibel relationship between amplifier distortion products”; Proc. IEEE, Vol. 58, pp. 1071–1086, July 1970.

    Article  Google Scholar 

  77. W. I. Way: “Large signal nonlinear distortion prediction for a single-mode laser diode under microwave intensity modulation”; J. Lightwave Techn., Vol. LT-5, pp. 305–315, March 1987.

    Article  Google Scholar 

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  1. Institut für Hochfrequenztechnik, Technische Universität Berlin, Germany

    K. Petermann

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© 1988 Kluwer Academic Publishers

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Petermann, K. (1988). Intensity-Modulation Characteristics of Laser Diodes. In: Laser Diode Modulation and Noise. Advances in Optoelectronics (ADOP), vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2907-4_4

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  • DOI: https://doi.org/10.1007/978-94-009-2907-4_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-1204-8

  • Online ISBN: 978-94-009-2907-4

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