Abstract
In recent years three-dimensional modelling of semiconductor devices has become increasingly important due to the continued miniaturisation of devices. There has been a corresponding increase in the research devoted to developing three-dimensional numerical models of devices. Here we discuss some of the work in the ESPRIT project EVEREST relating to this. We describe in detail the software implementation of the algorithmic techniques being developed in the project.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
D.L. Scharfetter and H.K. Gummel “ arge signal analysis of a Silicon Read diode oscillator”, IEEE Trans. Elect. Dev., ED-16, 64–77 (1969).
J.O. Beck and R. Conradt,“Auger recombination in silicon”, Solid State Comm. vol. 13 93–95 (1973).
C. den Heijer,“Preconditioned iterative methods for nonsymmetric linear systems”, Proc.Int.Conf. Simulation of Semiconductor Devices and Processes, Pineridge Press, Swansea, 276–285 (1984).
H.P.D. Lanyon and R.A. Tuft, “Bandgap narrowing in heavily doped silicon”, Proc IEDM, pp 316–319 (1978).
J.A. Meijerink and H.A. Van der Vorst, “Guidlines for the usage of incomplete decompositions in solving sets of linear equations as they occur in practical problems”,J. Comp. Phys.,44 134–155 (1981).
S.J. Polak, C. Den Heijer, W.H.A. Schilders and P. Markowich, “Semiconductor device modelling from the numerical point of view”, Int. J. Num. Meth. Eng. 24, 763–838 (1987).
S. Selberherr, “Analysis and simulation of semiconductor devices” Springer-Verlag, Wien-New York (1984).
W. Shockley and W.T. Read Jr. “Statistics of the recombination of holes and electrons” Phys. Rev. 87, No.5, 835–842 (1952).
J.W. Slotboom and H.C.De Graaf,“Bandgap narrowing in silicon bipolar transistors”, IEEE Trans. Elect. Dev. 24, 1123–1125 (1977).
G. Voronoi, “Nouvelles applications des parametres continus a la theorie des formes quadratiques”, J. Reine Angew. Math. 134, No.4, 198–287 (1908).
O.E. Akcasu, “Convergence of Newton’s method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices”, Solid State Elect. (GB) 27, No. 4, 319–328 (1984).
G.L. Dirichlet, “Uber die Reduction der positiven quadratischen Formen mit drei unbestimmten ganzen Zahlen”, J. Reine Angew. Math. 40, No. 3, 209–227 (1850).
S.P. Edwards, A.M. Howland and P.J. Mole, “Initial guess strategy and linear algebra techniques for a coupled two dimensional equation solver”, NASECODE IV Proc, Dublin, Boole Press, 1985.
W.L. Engl, H.K. Dirks and B Meinzerhagen, “Device modeling”,Proc. IEEE 71, No. 1, 10–33 (1983).
J.G. Fossum and D.S. Lee,“A Physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon”, Solid State Electron, Vol.25, No.8, 741–747 (1982).
B.J. McCartin, “Discretisation of the semiconductor device equations”, from New Problems and New Solution for Device and Process Modelling (ed. J.J.H. Miller) Boole Press, Dublin (1985)
P.J. Mole, R. Debney and R. Van De Poel, “First issue release documentation for the linear solver, sparsity generation, Jacobian filling and machine constant routines”, EC Microelectronic Project MR-02-RAL, Report GEC 5.3 (June 1987).
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1989 ECSC, EEC, EAEC, Brussels and Luxembourg
About this paper
Cite this paper
Greenough, C., Gunasekera, D., Mawby, P.A., Towers, M.S., Fitzsimons, C.J. (1989). Software for Modelling Semiconductor Devices in Three Dimensions. In: Esprit ’89. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1063-8_15
Download citation
DOI: https://doi.org/10.1007/978-94-009-1063-8_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6968-7
Online ISBN: 978-94-009-1063-8
eBook Packages: Springer Book Archive