Skip to main content

NAND and Controller Co-design for SSDs

  • Chapter
  • First Online:
Inside Solid State Drives (SSDs)

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 37))

Abstract

SSD is made up by NAND Flash memories, DRAMs and a NAND controller. To realize a low-power high-speed SSD, the overall performance of the NAND Flash memory and the NAND controller should be optimized by co-designing both NAND and controller circuits. This chapter describes the most advanced circuits in this field.

Furthermore, 3D-integration in the SSD system becomes a key topic and an example of low power 3D-integrated SSD is shown.

Finally, a couple of techniques, Asymmetric Coding and Stripe Pattern Elimination Algorithm, for reducing the NAND raw BER are presented.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 149.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 199.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. K. Takeuchi, NAND successful as a media for SSD. ISSCC, Tutorial T7 (2008)

    Google Scholar 

  2. K. Takeuchi, Novel co-design of NAND flash memory and NAND flash controller circuits for sub-30 nm low-power high-speed Solid-State Drives (SSD), in Symposium on VLSI Circuits Tech. Dig, 2008, pp. 124–125

    Google Scholar 

  3. K. Takeuchi, Novel co-design of NAND flash memory and NAND flash controller circuits for sub-30 nm low-power high-speed solid-state drives (SSD). IEEE J. Solid-State Circuits 44(4, April), 1227–1234 ( 2009)

    Article  Google Scholar 

  4. K. Ishida et al., A 1.8 V 30nJ adaptive program-voltage (20 V) generator for 3D-integrated NAND flash SSD, in ISSCC Tech. Dig, 2009, pp. 238–239

    Google Scholar 

  5. C. Park et al., A high performance controller for NAND flash-based solid state disk (NSSD), in NVSMW Tech. Dig., 2006, pp. 17–20

    Google Scholar 

  6. Y. Li et al., A 16 Gb 3b/cell NAND flash memory in 56 nm with 8 MB/s write rate, in ISSCC Tech. Dig., 2008, pp. 506–507

    Google Scholar 

  7. N. Shibata et al., A 70 nm 16 Gb 16-level-cell NAND flash memory, in Symposium on VLSI Circuits Tech. Dig., 2007, pp. 190–191

    Google Scholar 

  8. K. Takeuchi et al., A 56 nm CMOS 99 mm2 8 Gbit multi-level NAND flash memory with 10 Mbyte/s program throughput. IEEE J. Solid-State Circuits 42, 219–232 (2007)

    Article  Google Scholar 

  9. T. Tanaka et al., A quick intelligent program architecture for 3 V-only NAND EEPROMs, in Symposium on VLSI Circuits Tech. Dig., 1992, pp. 20–21

    Google Scholar 

  10. K. Takeuchi et al., A multipage cell architecture for high-speed programming multilevel NAND flash memories, in Symposium on VLSI Circuits Tech. Dig., 1997, pp. 67–68

    Google Scholar 

  11. T. Hara et al., A 146 mm2 8 Gb NAND flash memory with 70 nm COMS technology, in ISSCC Tech. Dig., 2005, pp. 44–45

    Google Scholar 

  12. K.D. Suh et al., A 3.3 V 32Mb NAND flash memory with incremental step pulse programming scheme. in ISSCC Tech. Dig., 1995, pp. 128–129

    Google Scholar 

  13. K. Takeuchi et al., A source-line programming scheme for low voltage operation NAND flash memories, in Symposium on VLSI Circuits Tech. Dig., 1999, pp. 37–38

    Google Scholar 

  14. K. Takeuchi et al., A double-level-Vth select gate array architecture for multilevel NAND flash memories. in Symposium on VLSI Circuits Tech. Dig., 1995, pp. 69–70

    Google Scholar 

  15. R. Sundaram et al., A 128 Mb NOR flash memory with 3 MB/s program time and low-power write using an in-package inductor charge-pump, in ISSCC Dig. Tech. Papers, 2005, pp. 50–51

    Google Scholar 

  16. K. Takeuchi et al., A 56 nm CMOS 99 mm2 8 Gb multi-level NAND flash memory with 10 MB/s program throughput, in ISSCC Dig. Tech. Papers, 2006, pp. 144–145

    Google Scholar 

  17. K. Kanda et al., A 120 mm2 16 Gb 4-MLC NAND flash memory with 43 nm CMOS technology, in ISSCC Dig. Tech. Papers, 2008, pp. 430–431

    Google Scholar 

  18. T. Tanzawa, T. Tanaka, A stable programming pulse generator for single power supply flash memories. IEEE J. Solid-State Circuits 32(6), 845–851 (1997)

    Article  Google Scholar 

  19. S. Tanakamaru et al., 95%-lower-BER 43%-lower-power intelligent Solid-State Drive (SSD) with asymmetric coding and stripe pattern elimination algorithm, in ISSCC Dig. Tech. Papers, 2011, pp. 204–205

    Google Scholar 

  20. K. Takeuchi, NAND successful as a media for SSD, in ISSCC, Tutorial T-7, 2008

    Google Scholar 

  21. J.D. Lee et al., A new programming disturbance phenomenon in NAND flash memory by source/drain hot-electrons generated by GIDL current, in Non-Volatile Semiconductor Memory Workshop (NVSMW), Monterey, CA, USA, 2006, pp. 31–33

    Google Scholar 

  22. M. Abraham, NAND Flash Trends for SSD/Enterprise, in Flash Memory Summit, 2010

    Google Scholar 

  23. Y.Y. Tai, Error control coding for MLC flash memories, in Flash Memory Summit, 2010

    Google Scholar 

  24. K. Takeuchi et al., A multipage cell architecture for high-speed programming multilevel NAND flash memories, in Symposium on VLSI Circuits Dig. Tech. Papers, 1997, pp. 67–68

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to K. Takeuchi .

Rights and permissions

Reprints and permissions

Copyright information

© 2013 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

Takeuchi, K. (2013). NAND and Controller Co-design for SSDs. In: Inside Solid State Drives (SSDs). Springer Series in Advanced Microelectronics, vol 37. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-5146-0_7

Download citation

  • DOI: https://doi.org/10.1007/978-94-007-5146-0_7

  • Published:

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-007-5145-3

  • Online ISBN: 978-94-007-5146-0

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics