Abstract
This chapter presents POSFET devices that can detect contact parameters such as dynamic contact forces and/or temperature variations. Unlike the conventional arrangements where transducer and electronics are separate entities, a POSFET is an “integral sensing unit” comprising of transducer, i.e. P(VDF-TrFE) piezoelectric polymer film, and the electronic unit, i.e. MOS transistor. These novel and integral sensing units are obtained by depositing a P(VDF-TrFE) piezoelectric polymer film on the gate area of MOSFET devices. Accordingly they are termed as POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistors) touch sensing devices or simply POSFETs. These devices differ from the extended gates based sensors, discussed in the previous chapter, in terms of the location of piezoelectric material vis-a-vis MOS device. Such difference are described later in this chapter. The structure, working principle, fabrication process, and the experimental evaluation of the POSFETs are presented in following sections.
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Dahiya, R.S., Valle, M. (2013). POSFET I—The Touch Sensing Device. In: Robotic Tactile Sensing. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-0579-1_7
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DOI: https://doi.org/10.1007/978-94-007-0579-1_7
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