Abstract
A two-dimensional array of nanowires, embedded in a semi-insulating medium, can elicit powerful computational and signal processing activity if the nanowires exhibit an N-type non-linearity in their current versus voltage characteristics. Such a system is relatively easy to self assemble using chemical routes and we have synthesized such systems using simple electrochemistry. The measured current–voltage characteristics of the nanowires exhibit the required N-type non-linearity. Based on the experimentally extracted parameters, we have simulated the dynamics of the arrays to show that they replicate the behavior of cellular non-linear networks. Specific examples of image processing functions are presented.
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Notes
- 1.
There should be some dependence of the peak to valley ratio on the number of nanowires contacted if the I–V characteristic varies from wire to wire. In that case, ensemble averaging over a large number of wires will suppress the peak to valley ratio.
- 2.
The surface charge comes about mostly from interface states which can vary widely.
References
V. P. Roychowdhury, D. B. Janes, S. Bandyopadhyay and X. Wang, “Collective computational activity in self assembled arrays of quantum dots: A novel neuromorphic architecture for nanoelectronics”, IEEE Trans. Elec. Dev., Vol. 43, 1688 (1996).
V. P. Roychowdhury, D. B. Janes and S. Bandyopadhyay, “Nanoelectronic architecture for Boolean logic”, Proc. of the IEEE, Vol. 85, 574 (1997).
K. Karahaliloglu, S. Balkir, S. Bandyopadhyay and S. Pramanik, “A quantum dot image processor”, IEEE Trans. Elec. Dev., Vol. 50, 1610 (2003).
S. Bandyopadhyay, V. P. Roychowdhury and D. B. Janes, “Chemically self assembled nanoelectronic computing networks”, Int. J. High Speed Electron. Syst., Vol. 9, 1 (1998). Also in Quantum Based Devices and Systems. Eds. M. Dutta and M. A. Stroscio (World Scientific, Singapore, 1998), Chapter 1.
S. Bandyopadhyay, K. Karahaliloglu, S. Balkir and S. Pramanik, “Computational paradigm for nanoelectronics: Self assembled quantum dot cellular neural networks”, IEE Proc. - Circuits, Devices, Syst., Vol. 152, 85 (2005).
S. Bandyopadhyay, A. E. Miller, H-C Chang, G. Banerjee, V. Yuzhakov, D-F Yue, R. E. Ricker, S. Jones, J. A. Eastman, E. Baugher and M. Chandrasekhar, “Electrochemically assembled quasi periodic quantum dot arrays”, Nanotechnology, Vol. 7, 360 (1996).
N. Kouklin and S. Bandyopadhyay, “Capacitance voltage spectroscopy of self assembled ordered arrays of quantum dots”, 2000 IEEE International Symposium on Compound Semiconductors, IEEE Press, pg. 303.
V. Pokalyakin, S. Tereshin, A. Varfolomeev, D. Zaretsky, A. Baranov, A. Banerjee, Y. Wang, S. Ramanathan and S. Bandyopadhyay, “Proposed model for bistability in nanowire non-volatile memory”, J. Appl. Phys., Vol. 100, 124306 (2005).
S. M. Sze, Physics of Semiconductor Devices, 2nd. edition, (John Wiley & Sons, New York, 1981).
K. Karahaliloglu and S. Balkir, “Quantum Dot Networks with Weighted Coupling”, in Proc. of IEEE Int. Symposium on Circuits and Systems, Vol. 4, pp. 896-899, Bangkok May 2003.
Acknowledgements
The work is supported by National Science Foundation under grant CCF 0506710.
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Bandyopadhyay, S., Karahaliloglu, K., Patibandla, S. (2010). Computing with Nanowires: A Self Assembled Neuromorphic Architecture. In: Huang, C. (eds) Robust Computing with Nano-scale Devices. Lecture Notes in Electrical Engineering, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8540-5_7
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DOI: https://doi.org/10.1007/978-90-481-8540-5_7
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