Abstract
Using methods of the X-ray diffraction and Raman backscattering.were studied properties of AlGaAs/GaAs (100) MOCVD heterostructures which have been grown up at low temperature (LT). It is established, that dependence on Al concentration of AlGaAs solid solutions crystal lattice parameter does not submit to classical Vegard's law, and values of parameters are less than at GaAs.
Methods of Raman backscattering.shown that at high concentration of a carbon acceptor atoms concentrate on defects of a crystal lattice of AlGaAs solid solution with formation of carbon nanoclusters is confirmed.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Domashevskaya, E.P., Gordienko, N.N. (et al.)Semiconductors 2008, vol. 42, no. 9, pp. 1069–1075.
É. P. Domashevskaya, P. V. Seredin (et al.) Semiconductors, 2005, vol. 39, no. 3.
E.P. Domashevskaya, P.V. Seredin, A.N. Lukin, L.A. Bityutskaya, M.V. Grechkina, I.N. Arsent'ev, D.A. Vinokurov, I.S. Tarasov. Surface and Interface Analysis. 8, 4, 828 – 832 (2006).
Zunger A. MRS-IRS bulletin/July 1997; http://www.sst.nrel.gov/images/mrs97.
Pearson WB. Crystal Chemistry and Physics of Metals and Alloys. Wiley: New York (1972).
Zemskov VS. Solid Solutions in Semiconductor System. Nauka: Moscow (1978).
Yu. A. Goldberg, in Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, S. Rumyantsev, and M. Shur,World Sci., London, 1999, vol. 2, p. 1.
D. Zhou, B.F. Usher, J. Phys. D: Appl. Phys., 34, 1461 (2001).
Wasilewski Z R, Dion M M, Lockwood D J, Poole P, Streater R W and Spring Thorpe A J. J. Appl. Phys., 81, 1683–94 (1997).
Adachi S. J. Appl. Phys., 58, R1–29 (1985).
S. Fleischer, C. D. Beling, and S. Fung. Journal of Applied Physics, 81, 1, 190–198 (1997).
A. Gaber, H. Zillgen, P. Ehrhart, P. Partyka and R.S. Averback. Appl. Phys., 82, 5348 (1997).
W. Hayes and R. Loudon. Scattering of Light by Crystals, John Wiley & Sons, New York (1978).
M. Bulbul, G.D. Farran and S.R.P. Cmith. Eur. Phys. J. B, 24, 3, 6 (2001).
B. Jusserand and J. Sapriel. Phys. Rev. B., 24, 7194 (1981).
P.V. Seredin et al. “Structures and optical properties low temperature heterostructures AlGaAs/GaAs (100) on the basic of subtraction solid solutions”. Accept to publication in “Semiconductors”.
Raman studies of heavily carbon doped GaAs. Moonsuk Seon Dissertation. Texas Tech University (1999).
A.J. Moll. E.E. Haller, J.W. Agedll. and W. Walukiewicz. Appl Phys. Lett. 65:1145 (1994).
J. Wagner, R.C Newman, B.R. Davidson, S.P. Westwater, T.J. Bu Uough, T.B. Joyce, C.D. Latham, R. Jones, and S. Oberg. Phys. Rev. Lett. 78:74 (1997).
A.V. Boitsov, N.A. Bert, V.V. Chaldyshev, V.V. Preobrazhenskii, M.A. Putyato and B.R. Semyagin. Semiconductors, 43, 2, pp. 266–268 (2009).
Acknowledgements
The scientific research is performed with support of the Russian Fund of Basic researches 09-02-97505-r_center_a, 09-02-90719-mob_st.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2010 Springer Science+Business Media B.V.
About this paper
Cite this paper
Seredin, P. et al. (2010). XRD and Raman Study of Low Temperature AlGaAs/GaAs (100) Heterostructures. In: Gusev, E., Garfunkel, E., Dideikin, A. (eds) Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3807-4_18
Download citation
DOI: https://doi.org/10.1007/978-90-481-3807-4_18
Published:
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-3805-0
Online ISBN: 978-90-481-3807-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)