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The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

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Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators

Abstract

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

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References

  1. Rebeiz, G. M., “RF MEMS,” in Theory, Design and Technology. Hoboken, NJ: Wiley, 2003, pp. 185–192

    Google Scholar 

  2. J. Wibbeler, G. Pfeifer and M. Hietschold, Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS), Sensors and Actuators A 71, 74–80 (1998)

    Article  Google Scholar 

  3. X. Yuan, S. Cherepko, J. Hwang, C. L. Goldsmith, C. Nordquist and C. Dyck, Initial Observation and Analysis of Dielectric-Charging Effects on RF MEMS Capacitive Switches, International Microwave Symposium, pp. 1943–1946, 2004

    Google Scholar 

  4. S. Melle, F. Flourens, D. Dubuc, K. Grenier, P. Pons, F. Pressecq, J. Kuchenbecker, J. L. Muraro, L. Bary, and R. Plana, in Proc. 33rd Eur. Microwave.Conf., Oct. 2003, pp. 37–40.

    Google Scholar 

  5. P. Czarnecki; X. Rottenberg; R. Puers; I. de Wolf, “Effect of Gas Pressure on the Lifetime of Capacitive RF MEMS Switches”, 19th IEEE Interna Microtional Conference on Electro Mechanical Systems, 2006. MEMS 2006 Istanbul, p. 890–893

    Google Scholar 

  6. Z. Olszewski, R. Duane and C. O’Mahony, “A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches”, Applied Physics Letters 93, 094101 2008

    Article  Google Scholar 

  7. C. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, J. Brank, and M. Eberly, Lifetime Characterization of Capacitive RF MEMS Switches, IEEE MTT-S Digest pp. 227–230, 2001

    Google Scholar 

  8. W.M van Spengen, R. Puers, R. Mertens and I. de Wolf, A low frequency test-up for the reliability assessment of capacitive RF MEMS switches, J. of Micromechanics and Microengineering 13, pp. 604–612, 2003

    Article  Google Scholar 

  9. M. Lamhamdi, P. Pons, U. Zaghloul, L. Boudou, F. Coccetti, J. Guastavino, Y. Segui, G. Papaioannou and R. Plana, Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation, Microelectronics Reliability 48, pp. 579–582, 2008

    Article  Google Scholar 

  10. G. Papaioannou, J. Papapolymerou, P. Pons and R. Plana, Dielectric charging in radio frequency microelectromechanical system capacitive switches: A study of material properties and device performance, Applied Physics Letters 90, pp. 233–507, 2007

    Article  Google Scholar 

  11. R.W. Herfst, P.G. Steeneken, J. Schmitz, A.J.G. Mank and M. van Gils, Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches, 46th Annual International Reliability Physics Symposium, Phoenix, pp. 492–495, 2008

    Google Scholar 

  12. A. Belarni, M. Lamhamdi, P. Pons, L. Boudou, J. Goustavino, Y. Segui, G. Papaioannou and R. Plana, Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches, Microelectronics Reliability 48, pp. 1232–1236, 2008

    Article  Google Scholar 

  13. J.R. Reid and R.T. Webster, “Measurements of charging in capacitive microelectromechanical switches”, Electron. Lett. 38 (24) (2002), pp. 1544–1545

    Article  Google Scholar 

  14. G. Papaioannou, M. Exarchos, V. Theonas, G. Wang and J. Papapolymerou, IEEE Trans. on Microwave Theory and Tech. 53, 3467 (2005)

    Article  Google Scholar 

  15. G. J. Papaioannou M. Exarchos, V. Theonas, J. Psychias, G. Konstantinidis, D. Vasilache, A. Muller, and D. Neculoiu, Effect of space charge polarization in radio frequency microelectromechanical system capacitive switch dielectric charging, Applied Physics Letters vol 89, pp. 103512-1 to 4, 2006

    Article  Google Scholar 

  16. G. J. Papaioannou, G. Wang, D. Bessas and J. Papapolymerou, Contactless Dielectric Charging Mechanisms in RF-MEMS Capacitive Switches, 1st European Microwave Integrated Circuits Conference EuMW, pp. 513–516, 2006

    Google Scholar 

  17. G. J. Papaioannou and T. Lisec, Dielectric charging process in AlN RF-MEMS capacitive switches, Proceedings of the 2nd European Microwave Integrated Circuits Conference, pp. 540–543, 2007

    Google Scholar 

  18. E. Papandreou, G. Papaioannou and T. Lisec, “A correlation of capacitive RF-M.EMS reliability to AlN dielectric film spontaneous polarization”, International Journal of Microwave and Wireless Technologies 1, 43–47, (2009)

    Article  Google Scholar 

  19. E. Berland, T. Delage, C. Champeaux, P. Tristant, A. Catherinot, and P. Blondy, “Dielectric materials in MEMS switches: a comparison between BST and Al2O3,” Proceedings of the MEMSWAVE, Toulouse, 2003

    Google Scholar 

  20. P. Blondy, A. Crunteanu, A. Pothier, P. Tristant, A. Catherinot, C. Champeaux, Effects of Atmosphere on the Reliability of RF-MEMS Capacitive Switches, European Microwave Integrated Circuits Conference, EuMW, pp. 548–551, 2007

    Google Scholar 

  21. X. Rottenberg, H. Jansen, P. Fiorini, W. De Raedt, H. A. C. Tilmans, “Novel RF-MEMS capacitive switching structures”, 32nd European Microwave Conference, 1–4, 2002.

    Google Scholar 

  22. J.K. Luo, M. Lin, Y.Q. Fu, L. Wang, A.J. Flewitt, S.M. Spearing, N.A. Fleck, W.I. Milne, “MEMS based digital variable capacitors with a high-k dielectric insulator”, Sensors and Actuators A 132 (2006) 139–146

    Article  Google Scholar 

  23. J. Tsaur, K. Onodera, T. Kobayashi, Z.-J. Wang, S. Heisig, R. Maeda, T. Suga, “Broadband MEMS shunt switches using PZT/HfO2 multi-layered high k dielectrics for high switching isolation”, Sensors and Actuators A 121 (2005) 275–281

    Article  Google Scholar 

  24. R. Daigler, G. Papaioannou, E. Papandreou and J. Papapolymerou, “Dielectric Charging in RF-MEMS Capacitive Switches - Effect of Dielectric Film Thickness”, International Microwave Symposium 1275–8, 2008

    Google Scholar 

  25. G. Papaioannou, E. Papandreou, J. Papapolymerou, R. Daigler, “Dielectric Discharging processes in RF-MEMS Capacitive Switches”, Asia-Pacific Microwave Conference, 2007. APMC 1–4, 2007

    Google Scholar 

  26. D. Mardivirin, A. Pothier, A. Crunteanu, B. Vialle and P. Blondy, IEEE Trans. on Microwave Theory and Tech. 57, 231 (2009)

    Article  Google Scholar 

  27. P. Czarnecki, X. Rottenberg, P. Soussan, P. Ekkels, P. Muller, P. Nolmans, W. De Raedt, H.A.C. Tilmans, R. Puers, L. Marchand, I. DeWolf, “Effect of substrate charging on the reliability of capacitive RF MEMS switches”, Sensors and Actuators A in press

    Google Scholar 

  28. J. van Turnhout in: G.M. Sessler (Ed.) Topics in Applied Physics: “Electrets”, vol. 33, ch. 3, pp. 81–216, Springer-Verlag, Berlin, 1987

    Google Scholar 

  29. J. Vandershueren and J. Casiot, Topics in Applied Physics: Thermally Stimulated Relaxation in Solids, P. Braunlich, Ed. Berlin, Germany: Springer-Verlag, 1979, vol. 37, ch. 4.

    Google Scholar 

  30. E. Barsoukov and J. Ross Macdonald, “Impedance Spectroscopy Theory, Experiment, and Applications”, John Wiley & Sons, Inc., Hoboken, New Jersey, 2005

    Google Scholar 

  31. Kwan Chi Kao, “Dielectric Phenomena in Solids, With Emphasis on Physical Concepts of Electronic Processes”, Elsevier Academic Press 2004

    Google Scholar 

  32. C.J.F. Böttcher, “Theory of electric polarization”, Elsevier, Amsterdam 1952

    Google Scholar 

  33. V. V. Daniel, “Dielectric Relaxation” (Academic Press, New York, 1967)

    Google Scholar 

  34. A. Toriumi, K. Tomida, H. Shimizu, K. Kita and K. Kyuno, Far- and mid-infrared absorption of HfO2/SiO2/Si system, in Silicon Nitride, Silicon Oxide Thin Insulating Films and Other Engineering Dielectrics VIII, by R. E. Sah et al. editors, 471–481, 2005

    Google Scholar 

  35. S. Duenas, H. Castan, J. Barbolla, R.R. Kola, P.A. Sullivan, Electrical characteristics of anodic tantalum pentoxide thin ®lms under thermal stress, Microelectronics Reliability 40 (2000) 659±662

    Article  Google Scholar 

  36. K.-H. Allers, P. Brenner, M. Schrenk, Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2003, 35–38, 2003

    Google Scholar 

  37. M. Strømme Mattsson and G. A. Niklasson, Isothermal transient ionic current as a characterization technique for ion transport in Ta2O5, J. of Applied Physics 85, 8199–8204, 1999

    Article  Google Scholar 

  38. V.V. Afanas’ev, A. Stesmans, Injection induced charging of HfO2 insulators on Si, Materials Science and Engineering B 109 (2004) 74–77

    Article  Google Scholar 

  39. G. Puzzilli and F. Irrera, Long time transients in hafnium oxide, Microelectronic Engineering 84 (2007) 2394–2397

    Article  CAS  Google Scholar 

  40. C M Fang and R A de Groot, “The nature of electron states in AlN and α-Al2O3”, J. Phys.: Condens. Matter vol. 19 pp. 386223 1–6, 2007

    Google Scholar 

  41. F. Talbi, F. Lalam and D. Malec, “DC conduction of Al2O3 under high electric field”, J. Phys. D: Appl. Physics vol. 40, pp. 3803–3806, 2007

    Article  CAS  Google Scholar 

  42. Cheng Rong Li, Li Jian Ding, Jin Zhuang Lv, You Ping Tu and Yang Chun Cheng, “The Relation of Trap Distribution of Alumina with Surface Flashover Performance in Vacuum”, IEEE Trans. on Dielectrics and Electrical Insulation vol. 13, pp. 79–84, 2006

    Article  Google Scholar 

  43. E. Papandreou, A. Crunteanu, G. Papaioannou, P. Blondy, F. Dumas-Bouchiat, C. Champeaux and A. Catherinot, Investigation of dielecric charging mechanisms in Al2O3 RF mems capacitive switches, MEMSWAVE 2008, Herakleio Crete

    Google Scholar 

  44. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides”, Phys. Rev. B 56 (1997), R10024-7.

    Article  CAS  Google Scholar 

  45. A. Zoroddu, F. Bernardini, P. Ruggerone and V. Fiorentini, “First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory” Physical Review B 64 (2001), 045208-1–045208-6

    Article  Google Scholar 

  46. J.A. Ruffner, P.G. Clem, B.A. Tuttle, D. Dimos and D.M. Gonzales, “Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films”, Thin Solid Films 354 (1999), 256–261

    Article  CAS  Google Scholar 

  47. M. Stutzmann et al., “Playing with polarity”, Physica Status Solidi (b) 228 (2001), 505–512

    Article  CAS  Google Scholar 

  48. T. Lisec, C. Huth and B. Wagner, Dielectric Material Impact on Capacitive RF MEMS Reliability, 12th GAAS Symposium European Microwave Week, 471–4, 2004

    Google Scholar 

  49. M. Carrada, A. Zerga, M. Amann, J.J. Grob, J.P. Stoquert, A. Slaoui, C. Bonafos, S. Scham, Structural and optical properties of high density Si-ncs synthesized in SiNx:H by remote PECVD and annealing, Materials Science and Engineering B 147 (2008) 218–221

    Article  CAS  Google Scholar 

  50. V. A. Gritsenko, D. V. Gritsenko, Yu. N. Novikov, R. W. M. Kwok and I. Bello, Short-range order, large scale potential fluctuations and photoluminescence in amorphous SiNx, Journal of Experimental and Theoretical Physics, Vol. 98, No. 4, 2004, pp. 760–769

    Article  CAS  Google Scholar 

  51. F. Iacona, C. Bongiorno, C. Spinella, Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films, J. of Applied Physics 95, 2004, 3723

    Article  CAS  Google Scholar 

  52. K. Yoshida, I. Umezu, N. Sakamoto, M. Inada and A. Sugimura, Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering, J. of Applied Physics 92, 2002, 5936

    Article  CAS  Google Scholar 

  53. D. M. Fleetwood et al., Dipoles in SiO2: Border traps or not?, in Silicon Nitride, Silicon Oxide Thin Insulating Films and Other Engineering Dielectrics VII, by R. E. Sah et al. editors, 291, 2003

    Google Scholar 

  54. E. Papandreou, M. Lamhamdi, C.M. Skoulikidou, P. Pons, G. Papaioannou and R. Plana, Structure dependent charging process in RF MEMS capacitive switches, Microelectronics Reliability 47, pp. 1812–1817, 2007

    Article  CAS  Google Scholar 

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Papaioannou, G. (2010). The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches. In: Gusev, E., Garfunkel, E., Dideikin, A. (eds) Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3807-4_11

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