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Skyrmion Formation in Epitaxial FeGe Thin Films

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Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-type Compounds

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Abstract

We study the skyrmion formation in nanostructured FeGe Hall-bar devices by measurements of topological Hall effect, which extracts the winding number of a spin texture as an emergent magnetic field. Stepwise profiles of the topological Hall resistivity are observed in the course of varying the applied magnetic field, which arise from instantaneous changes in the magnetic structure such as creation, annihilation, and discontinuous motion of skyrmions. The discrete changes in topological Hall resistivity demonstrate the quantized nature of emergent magnetic flux inherent in each skyrmion, which had been indistinguishable in many-skyrmion systems on a macroscopic scale.

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Notes

  1. 1.

    There are experimental reports studying finite-size effect on skyrmion formation by real-space observation [23] and resistivity measurements [24] in MnSi nanowires. However, the wire width is still too large to feature the individual skyrmions.

  2. 2.

    Unavoidable side damage in the etching process would have greater influence on the smaller devices, which may be a crucial damage in the 32-nm device related to the inhibition of skyrmion formation. However, considering the magnetization property of FeGe remains in the Hall resistivity in the 32-nm device, there should be some effects of miniaturization on suppression of skyrmion formation, although we could not estimate the exact value of the threshold size.

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Authors and Affiliations

  1. Department of Applied Physics, The University of Tokyo, Tokyo, Japan

    Naoya Kanazawa

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  1. Naoya Kanazawa
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Correspondence to Naoya Kanazawa .

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Kanazawa, N. (2015). Skyrmion Formation in Epitaxial FeGe Thin Films. In: Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-type Compounds. Springer Theses. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55660-2_5

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