Abstract
A thermoelectric effect finds versatile applications in technologies for energy issues and sustained efforts have been made to explore higher-performance thermoelectric materials. In particular, transition-metal oxides with strong electron correlation have attracted much attention as the promising candidates. One possible important factor for the enhanced thermopower is suggested to be the configurational entropy term as represented in Heikes formula. However, it is still under debate whether the entropy term becomes dominant at merely a few or several hundred kelvin. In this chapter, we report a systematic investigation on the high-temperature thermoelectric response in a typical filling-control Mott transition system La\(_{1-\mathrm{{x}}}\)Sr\(_{\mathrm{{x}}}\)VO\(_{3}\). In the vicinity of the Mott transition, incoherent charge transport appears with increasing temperature and the thermopower undergoes two essential crossovers, asymptotically approaching the two Heikes-formula limit values. We show that the thermopower in the Mott critical state mainly measures the entropy per charge carrier that depends on electronic degrees of freedom. Our findings verify that the Heikes formula is indeed applicable to the real correlated electron-systems at practical temperatures (T > 200 K).
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Notes
- 1.
These phase transitions themselves are irrelevant to the thermopower crossovers discussed in the following section, observed at about \({\sim }200\) K over a wide doping range (\(0.14<x<0.30\)).
- 2.
In reality, also the effective electron correlation strength and the detailed electronic structure change with doping in the filling-control Mott transition systems, and then its variation may affect more detailed thermopower behaviors. For example, below \(x=0.16\) the asymptotical approach to \(S_2\) seems to appear from lower temperature region, which cannot be reproduced by the following simple model calculation. Advanced calculation based on the real electronic structure including the multi-orbital feature may explain such detailed behaviors.
- 3.
In the strong correlation limit where \(U/W\) approaches infinity, the Seebeck coefficient does not show the next asymptotic approach to the other limit value \(S_2\). Thermopower behaviors close to this situation can be confirmed in the doping variation of the thermopower calculated for \(U/W = 4.0\) as shown in Fig. 3.3.
References
Mahan G, Sales B, Sharp J (1997) Phys Today 50(3):42
Terasaki I, Sasago Y, Uchinokura K (1997) Phys Rev B 56:R12685
Lee M, Viciu L, Li L, Wang Y, Foo ML, Watauchi S, Pascal RA Jr, Cava RJ, Ong NP (2006) Nat Mater 5:537
Koshibae W, Tsutsui K, Maekawa S (2000) Phys Rev B 62:6869
Koshibae W, Maekawa S (2001) Phys Rev Lett 87:236603
Maekawa S, Tohyama T, Barnes SE, Ishihara S, Koshibae W, Khaliullin G (2004) Physics of transition metal oxides. Springer, Berlin
Wang Y, Rogado NS, Cava RJ, Ong NP (2003) Nature 423:425
Pálsson G, Kotliar G (1998) Phys Rev Lett 80:4775
Heikes RR, Ure RW (1961) Thermoelectricity: science and engineering. Interscience, New York
Chaikin PM, Beni G (1976) Phys Rev B 13:647
Singh DJ (2000) Phys Rev B 61:13397
Takeuchi T, Kondo T, Takami T, Takahashi H, Ikuta H, Mizutani U, Soda K, Funahashi R, Shikano M, Mikami M, Tsuda S, Yokoya T, Shin S, Muro T (2004) Phys Rev B 69:125410
Kuroki K, Arita R (2007) J Phys Soc Jpn 76:083707
Matsuo M, Okamoto S, Koshibae W, Mori M, Maekawa S (2011) Phys Rev B 84:153107
Beni G (1974) Phys Rev B 10:2186
Pruschke Th, Jarrell M, Freericks JK (1995) Adv Phys 44:187
Merino J, McKenzie RH (2000) Phys Rev B 61:7996
Oudovenko VS, Kotliar G (2002) Phys Rev B 65:075102
Miyasaka S, Okuda T, Tokura Y (2000) Phys Rev Lett 85:5388
Imada M, Fujimori A, Tokura Y (1998) Rev Mod Phys 70:1039
Mott NF (1990) Metal-insulator transitions. Taylor and Francis, London
Inaba F, Arima T, Ishikawa T, Katsufuji T, Tokura Y (1995) Phys Rev B 52:R2221
Zubkov VG, Bazuev GV, Perelyaev VA, Shveiken GP (1973) Sov Phys Solid State 15:1079
Mahajan AV, Johnston DC, Torgeson DR, Borsa F (1992) Phys Rev B 46:10966
Bordet P, Chaillout C, Marezio M, Huang Q, Santoro A, Cheong SW, Takagi H, Oglesby CS, Batlogg B (1993) J Solid State Chem 106:253
Miyasaka S, Okimoto Y, Iwama M, Tokura Y (2003) Phys Rev B 68:100406(R)
Dougier P, Hagenmuller P (1975) J Solid State Chem 15:158
Mahajan AV, Johnston DC, Torgeson DR, Borsa F (1992) Phys Rev B 46:10973
Fujioka J, Miyasaka S, Tokura Y (2006) Phys Rev Lett 97:196401
Miyasaka S, Okimoto Y, Tokura Y (2002) J Phys Soc Jpn 71:2086
Hasan MZ, Chuang Y-D, Qian D, Li YW, Kong Y, Kuprin A, Fedorov AV, Kimmerling R, Rotenberg E, Rossnagel K, Hussain Z, Koh H, Rogado NS, Foo ML, Cava RJ (2004) Phys Rev Lett 92:246402
Valla T, Valla T, Johnson PD, Yusof Z, Wells B, Li Q, Loureiro SM, Cava RJ, Mikami M, Mori Y, Yoshimura M, Sasaki T (2002) Nature 417:627
Brinkman WF, Rice TM (1970) Phys Rev B 2:4302
Ishida Y, Ohta H, Fujimori A, Hosono H (2007) J Phys Soc Jpn 76:103709
Haule K, Kotliar G (2009) In: Zlatić V, Hewson AC (eds) Properties and applications of thermoelectric materials. Springer, New York
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Uchida, M. (2013). Charge Dynamics and Thermoelectricity in a Typical System. In: Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Springer Theses. Springer, Tokyo. https://doi.org/10.1007/978-4-431-54297-1_3
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