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Abstract

Actually, it is rather difficult to present examples of simulations which are both interesting for readers with experience in numerical modeling and informative for readers with just general interest in modeling but without specialized knowledge of device physics. I have chosen two examples which are intended as a fair trade-off between these objectives.

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References

  1. Adler, M. S., Temple, V. A. K., Rustay, R. C.: Theoretical Basis for Field Calculations on Multi-Dimensional Reverse Biased Semiconductor Devices. Solid-State Electron. 25, No. 12, 1179–1186 (1982).

    Article  Google Scholar 

  2. Antoniadis, D. A., Hansen, S. E., Dutton, R. W.: SUPREM II-a Program for IC Process Modeling and Simulation. Report 5019–2, Stanford University, 1978.

    Google Scholar 

  3. Barnes, J. J., Shimohigashi, K., Dutton, R. W.: Short-Channel MOSFET’s in the Punchthrough Current Mode. IEEE Trans. Electron Devices ED-26, 446–453 (1979).

    Article  Google Scholar 

  4. Chamberlain, S. G., Husain, A.: Three-Dimensional Simulation of VLSI MOSFET’s. Proc. Int. Electron Devices Meeting, pp. 592–595 (1981).

    Google Scholar 

  5. Chynoweth, A. G.: Ionization Rates for Electrons and Holes in Silicon. Physical Review 109, 1537–1540 (1958).

    Article  CAS  Google Scholar 

  6. Demoulin, E., Greenfield, J. A., Dutton, R. W., Chatterjee, P. K., Tasch, A. F.: Process Statistics of Submicron MOSFET’s. Proc. Int. Electron Devices Meeting, pp. 34–37 (1979).

    Google Scholar 

  7. Franz, A. F., Franz, G. A., Selberherr, S., Ringhofer, C., Markowich, P.: Finite Boxes — A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation. IEEE Trans. Electron Devices ED-30, No. 9, 1070–1082 (1983).

    Article  Google Scholar 

  8. Franz, G. A., Franz, A. F., Selberherr, S., Markowich, P.: A Quasi Three Dimensional Semiconductor Device Simulation Using Cylindrical Coordinates. Proc. NASECODE III Conf., pp. 122–127. Dublin: Boole Press 1983.

    Google Scholar 

  9. Greenfield, J. A., Dutton, R. W.: Nonplanar VLSI Device Analysis Using the Solution of Poisson’s Equation. IEEE Trans. Electron Devices ED-27, 1520–1532 (1980).

    Article  Google Scholar 

  10. Kotani, N., Kawazu, S.: Computer Analysis of Punch-Through in MOSFET’s. Solid-State Electron. 22, 63–70 (1979).

    Article  Google Scholar 

  11. Kotani, N., Kawazu, S.: A Numerical Analysis of Avalanche Breakdown in Short-Channel MOSFET’s. Solid-State Electron. 24, 681–687 (1981).

    Article  Google Scholar 

  12. Müller, W., Risch, L., Schütz, A.: Analysis of Short Channel MOS Transistors in the Avalanche Multiplication Regime. IEEE Trans. Electron Devices ED-29, No. 11, 1778–1784 (1982).

    Article  Google Scholar 

  13. Schütz, A., Selberherr, S., Pötzl, H. W.: A Two-Dimensional Model of the Avalanche Effect in MOS Transistors. Solid-State Electron. 25, 177–183 (1982).

    Article  Google Scholar 

  14. Schütz, A., Selberherr, S., Pötzl, H. W.: Analysis of Breakdown Phenomena in MOSFET’s. IEEE Trans. Computer-Aided-Design of Integrated Circuits CAD-1, 77–85 (1982).

    Article  Google Scholar 

  15. Selberherr, S., Schütz, A., Pötzl, H. W.: MINIMOS — a Two-Dimensional MOS Transistor Analyzer. IEEE Trans. Electron Devices ED-27, 1540–1550 (1980).

    Article  Google Scholar 

  16. Selberherr, S., Schütz, A., Pötzl, H.: Investigation of Parameter Sensitivity of Short Channel MOSFET’s. Solid-State Electron. 25, 85–90 (1982).

    Article  Google Scholar 

  17. Selberherr, S., Schütz, A., Pötzl, H.: Two Dimensional MOS-Transistor Modeling. In: Process and Device Simulation for Integrated Circuit Design, pp. 490–581. The Hague: Martinus Nijhoff 1983.

    Google Scholar 

  18. Toyabe, T., Yamaguchi, K., Asai, S., Mock, M. S.: A Numerical Model of Avalanche Breakdown in MOSFET’s. IEEE Trans. Electron Devices ED-25, 825–832 (1978).

    Article  Google Scholar 

  19. Troutman, R. R.: VLSI Limitations from Drain-Induced Barrier Lowering. IEEE Trans. Electron Devices ED-26, 461–469 (1979).

    Article  Google Scholar 

  20. Van Overstraeten, R., DeMan, H.: Measurement of the Ionization Rates in Diffused Silicon p-n Junctions. Solid-State Electron. 13, 583–608 (1970).

    Article  Google Scholar 

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© 1984 Springer-Verlag/Wien

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Selberherr, S. (1984). A Glimpse on Results. In: Analysis and Simulation of Semiconductor Devices. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8752-4_9

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  • DOI: https://doi.org/10.1007/978-3-7091-8752-4_9

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-8754-8

  • Online ISBN: 978-3-7091-8752-4

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