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A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices

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Simulation of Semiconductor Processes and Devices 1998

Abstract

This paper gives an overview of MEMS simulation and the computational requirements in the field from the prospective of creating realistic geometry based on process simulation. We motivate the needs for such geometry, and discuss in detail one approach to create pseudo 3-D geometry from 2-D process simulation.

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References

  1. SPEEDIE, http://speedie.stanford.edu. MEMCAD, http://www.memcad.com. Shapes, http://www.xox.com. ProPHLEX, http://www.comco.com.

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  2. K. Wang, H.S. Park, Z. Yu, R.W. Dutton, “3D Solid Modeling of IC Structures Using Simulated Surface Topography,” SISPAD Conference Proceedings, Tokyo, 1996, pp. 131–132

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  3. J. Jung-Yeul Gill, L.V. Ngo, P.R. Nelson, C.J. Kim, “Elimination of Extra Spring Effect at the Step-Up Anchor of Surface-Micromachined Structure”, J. Microelectromechanical Sys., vol. 7, no. 1, pp. 114–123

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© 1998 Springer-Verlag/Wien

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Wilson, N.M., Hsiau, Z.K., Dutton, R.W., Pinsky, P.M. (1998). A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_39

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  • DOI: https://doi.org/10.1007/978-3-7091-6827-1_39

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7415-9

  • Online ISBN: 978-3-7091-6827-1

  • eBook Packages: Springer Book Archive

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