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Electron Subbands in Thin Silicon Films

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Strain-Induced Effects in Advanced MOSFETs

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

Abstract

Strain and hybrid orientation techniques are among the most important concepts to increase the performance of modern MOSFETs. The reason for the mobility enhancement lies in the band structure modification caused by stress. Multi-gate FinFETs and ultra-thin silicon body-based Silicon-On-Insulator (SOI) FETs are considered as perfect candidates for the 22nm technology node and beyond. Modification of the subband structure of inversion channels is the reason for improved transport characteristics of strained devices. Strong size quantization leads to a formation of quasi-two-dimensional subbands in carrier systems within thin silicon films.

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  1. Institute for Microelectronics, Technical University Vienna, Gusshausstrasse 27-29, 1040, Vienna, Austria

    Viktor Sverdlov

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  1. Viktor Sverdlov
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Sverdlov, V. (2011). Electron Subbands in Thin Silicon Films. In: Strain-Induced Effects in Advanced MOSFETs. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0382-1_11

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  • DOI: https://doi.org/10.1007/978-3-7091-0382-1_11

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  • Online ISBN: 978-3-7091-0382-1

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