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Postgrowth Characterization Methods

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Molecular Beam Epitaxy

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 7))

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Abstract

Devices grown by MBE include complex multilayer structures, besides layers of metals and dielectrics grown on single-crystal substrates. The technology of ion implantation even allows buried layer structures to be created. Two recently published more complicated structures are shown schematically in Fig. 5.1: (a) separate absorption grading and multiplication avalanche photodiode (SAGM APD) [5.1], (b) graded-index (GRIN) separate-confinement heterostructure (SCH) multi-quantum-well (MQW) laser [5.2].

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  1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 46, PL-02-668, Warszawa, Poland

    Dr. Marian A. Herman

  2. Institut für Experimentalphysik, Johannes-Kepler-Universität, A-4040, Linz/Auhof, Austria

    Dr. Helmut Sitter

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Herman, M.A., Sitter, H. (1989). Postgrowth Characterization Methods. In: Molecular Beam Epitaxy. Springer Series in Materials Science, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-97098-6_5

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