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Sources of Atomic and Molecular Beams

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Molecular Beam Epitaxy

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 7))

Abstract

The application of MBE to the growth of compound semiconductors for devices and monolithic circuits requires excellent film uniformity and reproducibility of growth conditions [2.1–7]. The uniformity in thickness, as well as in composition, of films grown by MBE depends on the uniformity of the molecular beams across the substrate. As already discussed (Sect. 1.1.2), the uniformity of the molecular beam patterns upon the substrate depends on the geometry of the “sources-substrate” system, and on the angular flux distribution of the individual sources in the system. The best uniformity of beam patterns is obtained with a sufficiently large source-to-subsrrate spacing, and with flux distributions at the source orifices which are isotropic in the solid angle subtended by the substrate [2.8]. The reproducibility of the growth process depends, on the other hand, on the long term stability of the beam fluxes, as well as on the flux transients resulting from the shutter operations, e.g., from cooling of the surface of the charge contained in the source upon shutter opening [2.9].

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Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 46, PL-02-668, Warszawa, Poland

    Dr. Marian A. Herman

  2. Institut für Experimentalphysik, Johannes-Kepler-Universität, A-4040, Linz/Auhof, Austria

    Dr. Helmut Sitter

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© 1989 Springer-Verlag Berlin Heidelberg

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Herman, M.A., Sitter, H. (1989). Sources of Atomic and Molecular Beams. In: Molecular Beam Epitaxy. Springer Series in Materials Science, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-97098-6_2

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  • DOI: https://doi.org/10.1007/978-3-642-97098-6_2

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