Abstract
The extremely short carrier lifetimes of amorphous and radiation-damaged semiconductors have been utilized to make high-speed photoconductive detectors and sampling gates with response times of approximately 10 ps.
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References
For a review, see: D. H. Auston, “Picosecond Opto-Electronics” to be published in Progress in Quantum Electronics.
See, for example, N. F. Mott and E. A. Davis, “Electronic Processes in Non-Crystalline Solids”, Clarendon Press, Oxford (1979).
A. M. Johnson, D. H. Auston, P. R. Smith, J. C. Bean, J. P. Harbison, and D. Kaplan, “Picosecond Photoconductivity in Amorphous Silicon”, see proceedings of this conference.
D. H. Auston, P. Lavallard, N. Sol, and D. Kaplan, Appl. Phys. Lett. 36, 66 (1980).
D. H. Auston, A. M. Johnson, P. R. Smith, and J. C. Bean, to be published in Appl. Phys. Lett.
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© 1980 Springer-Verlag Berlin Heidelberg
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Auston, D.H., Smith, P.R., Johnson, A.M., Augustiniak, W.M., Bean, J.C., Fraser, D.B. (1980). Recent Advances in Picosecond Optoelectronics. In: Shank, C.V., Hochstrasser, R., Kaiser, W. (eds) Picosecond Phenomena II. Springer Series in Chemical Physics, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87861-9_16
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DOI: https://doi.org/10.1007/978-3-642-87861-9_16
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