Abstract
Quantum Hall effect (QHE) behavior of the Hall conductivity σxy is observed in multiple (MHS) and single heterostructures (SHS) of GaAs/AlxGa1-x As at microwave frequencies (Ka band). Integer plateaus with even filling factor i are observed in σxy of the MHS as well as of the SHS with 2D electron and hole gas layers. In the case of the 2DEG in a SHS also the i=3 plateau is resolved. With this SHS it is clearly shown that the σxy plateaus occur equidistant on a 1/B scale and that the σxy values on the plateaus are multiples of a fundamental value.
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Kuchar, F., Meisels, R., Lim, K.Y., Pichler, P., Weimann, G., Schlapp, W. (1987). High-Frequency Conductivity in the Quantum Hall Effect Regime. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_15
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DOI: https://doi.org/10.1007/978-3-642-83114-0_15
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