Abstract
Random and channeled distributions of 11B ions implanted into silicon have been obtained for ion doses near 1012/cm2. The random projected ranges and standard deviations (30–300 keV) are in good agreement with calculated values when a value of electronic stopping 1.58 greater than that given by standard LSS theory is used, as was independently measured by Eisen. The channeled <111> distributions show maxima 1.9–1.5 times deeper than the random ranges for 80–300 keV range. Distributions at various angles away from the <111> or <100> channels are presented and comparisons are made between distributions implanted with [110] planar channeling and those which have no major index planar channeling. A discussion of these results and related annealing behavior for boron implanted silicon is given.
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Seidel, T.E. (1971). Distribution of Boron Implanted Silicon. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_9
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DOI: https://doi.org/10.1007/978-3-642-80660-5_9
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