Abstract
The inventory of paramagnetic defects in silicon was measured as the lattice disorder was increased from the crystalline to the amorphous phase by ion implantation. Measurements were made on n-type silicon implanted with 160 keV oxygen ions ranging in fluence from 1010 to 2 • 1016 O+/cm2. The EPR spectra of the negative divacancy (Si-G7), the neutral phosphorus-vacancy (Si-G8), the neutral 1-vacancy-oxygen (Si-Sl), and a new defect (Si-S2), which could be the negative charge state of the 4-vacancy, have been observed. These results were obtained by implanting 160 keV O+ ions into silicon samples which had previously been implanted with 200 keV P31 and annealed to form a degenerate n-type layer in the implanted region.
This work was supported by the U.S. Atomic Energy Commission.
This abstract summarizes the work presented at the Conference. A detailed paper has been submitted to the Journal of Applied Physics for publication.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1971 Springer-Verlag, Berlin · Heidelberg
About this paper
Cite this paper
Brower, K.L., Beezhold, W. (1971). Inventory of Paramagnetic Defects in Ion-Implanted Silicon. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_3
Download citation
DOI: https://doi.org/10.1007/978-3-642-80660-5_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
Online ISBN: 978-3-642-80660-5
eBook Packages: Springer Book Archive