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Time-of-Flight Scattering and Recoiling Spectrometry (TOF-SARS) for Surface Analysis

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Chemistry and Physics of Solid Surfaces VIII

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 22))

Abstract

Low energy (< 10 keV) ion scattering spectrometry [10.1] is becoming increasingly important as a surface analysis technique in three specific areas, i.e., surface elemental analysis [10.2–4], probing surface structure [10.5–16], and studying electronic transition probabilities [10.7,7–19] between ions or atoms and surfaces. This is largely due to the following recent advances: (i) impact collision ion scattering spectrometry [10.6] (ICISS) in which the scattering angle is close to 180°, thus simplifying the scattering geometry and allowing experimental determination of the shadow cone radii, (ii) the use of alkali primary ions [10.9, 10] which have low neutralization probabilities, leading to higher scattered ion fluxes, (iii) time-of-flight (TOF) techniques [10.20–23] with detection of both neutrals and ions in a multichannel mode in order to enhance sensitivity, (iv) scattered ion fractions [10.7,17] to probe the spatial distributions of electrons, and (v) the use of recoiling [10.24, 25] to determine the structure of light adsorbates on surfaces.

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  1. Department of Chemistry, University of Houston, 77204-5641, Houston, TX, USA

    O. Grizzi, M. Shi, H. Bu & J. W. Rabalais

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  1. O. Grizzi
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  2. M. Shi
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Editors and Affiliations

  1. Department of Chemistry and Laboratory for Surface Studies, The University of Wisconsin-Milwaukee, 53201, Milwaukee, WI, USA

    Ralf Vanselow Ph.D.

  2. Department of Chemistry, Private Bag, University of Auckland, Auckland, New Zealand

    Russell Howe

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Grizzi, O., Shi, M., Bu, H., Rabalais, J.W. (1990). Time-of-Flight Scattering and Recoiling Spectrometry (TOF-SARS) for Surface Analysis. In: Vanselow, R., Howe, R. (eds) Chemistry and Physics of Solid Surfaces VIII. Springer Series in Surface Sciences, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75762-4_10

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  • DOI: https://doi.org/10.1007/978-3-642-75762-4_10

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