Abstract
Lithography plays a central role in the fabrication of electronic devices, and is essential in the preparation of samples for studies of transport in 1-D. The minimum feature size required in the device is important in the choice of lithographic method. Generally for linewidths above 1μm 1inewidth optical lithography is used whilst for smaller dimensions it is necessary to use electron, ion beam or X-ray lithography. The linewidths in current production VLSI circuits range between 1 and 3μm; there are programs in the U.S and the U.K to reduce the linewidth to 0.5μm over the next few years [1]. Single conventional semiconducting electronic devices have been made with gates as small as O.1μm, and some experimental superconducting devices employ features with sizes in the 10–30nm range.
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Wilkinson, C.D.W., Beaumont, S.P. (1986). Electron Beam Nanolithography. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_3
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DOI: https://doi.org/10.1007/978-3-642-71446-7_3
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