Abstract
The concepts needed to understand the use of the transmission electron microscope for the microstructural characterisation of semiconductor systems are first exemplified by applications of the basic methods, as are the various approaches required for the preparation of suitable thin foils. Developments in the techniques which can now be applied to the atomic level structural and chemical characterisation of interfaces in such systems are then described mainly by considering specific problems for which the new methods have been developed. The applications considered range from the study of semiconductor/metal and semiconductor/insulator interfaces to the problems in analysing the quality of current III-V heterostructures. In conclusion the future trends in technique which will be required are discussed.
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Stobbs, W.M. (1986). Recently Developed TEM Approaches for the Characterisation of Semiconductor Heterostructures and Interfaces. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_11
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DOI: https://doi.org/10.1007/978-3-642-71446-7_11
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