Abstract
Recent advances in GaAs technology have resulted in several new classes of devices, all of which have very high speed response [1,2]. These devices have been shown, indirectly, to have response times of tens of picoseconds [1]. Indirect measurements are necessary because available sampling oscilloscopes have a limiting response of 25 picoseconds and jitter of a few picoseconds. Hence, most ultrafast devices are characterized in a ring oscillator configuration of several devices and individual device response is averaged. In the frequency domain most RF measurements are connector limited to the range of 18 GHz.
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References
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© 1985 Springer-Verlag Berlin Heidelberg
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Meyer, K.E., Dykaar, D.R., Mourou, G.A. (1985). Characterization of TEGFETs and MESFETs Using the Electrooptic Sampling Technique. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_9
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DOI: https://doi.org/10.1007/978-3-642-70780-3_9
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