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Characterization of TEGFETs and MESFETs Using the Electrooptic Sampling Technique

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Picosecond Electronics and Optoelectronics

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 21))

Abstract

Recent advances in GaAs technology have resulted in several new classes of devices, all of which have very high speed response [1,2]. These devices have been shown, indirectly, to have response times of tens of picoseconds [1]. Indirect measurements are necessary because available sampling oscilloscopes have a limiting response of 25 picoseconds and jitter of a few picoseconds. Hence, most ultrafast devices are characterized in a ring oscillator configuration of several devices and individual device response is averaged. In the frequency domain most RF measurements are connector limited to the range of 18 GHz.

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References

  1. H. Morkoc and P. M. Solomon: IEEE Spectrum 21, No. 2, 28 (1984).

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© 1985 Springer-Verlag Berlin Heidelberg

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Meyer, K.E., Dykaar, D.R., Mourou, G.A. (1985). Characterization of TEGFETs and MESFETs Using the Electrooptic Sampling Technique. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_9

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  • DOI: https://doi.org/10.1007/978-3-642-70780-3_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-70782-7

  • Online ISBN: 978-3-642-70780-3

  • eBook Packages: Springer Book Archive

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