Abstract
With the development of very high speed semiconductor devices which respond in the picosecond regime, such as the heterojunction bipolar transistor, permeable base transistor, GaAs MESFET and TEGFET, the need has arisen for new techniques to directly measure device response on this time scale. The continuing advancement of VLSI circuits also requires the development of new characterization techniques. The recent development of photoconductive [1] and electro-optic [2–7] sampling techniques has advanced the art of device characterization to meet some of these needs. The latter has been used to measure electrical transients as fast as 0.46 ps with submillivolt sensitivity [ 5–7].
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© 1985 Springer-Verlag Berlin Heidelberg
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Meyer, K.E., Mourou, G.A. (1985). Two Dimensional E-Field Mapping with Subpicosecond Resolution. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_7
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DOI: https://doi.org/10.1007/978-3-642-70780-3_7
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