Abstract
Many important applications exist for a three-terminal device capable of amplifying and generating power in the EHF frequency range and of operating at high speeds in a logic circuit. Although sufficiently fast two-terminal devices are presently available, three-terminal devices provide greater fan-out capability in a logic circuit and greater isolation of input and output signals in an analog circuit. The permeable base transistor(PBT) was conceived at Lincoln Laboratory in 1979 [1,2] as a device capable of being used in these applications [3,4,5]. It is presently one of several devices being developed for high frequency and high speed applications. Other devices include the conventional field-effect transistor (FET) [6,7], the high electron mobility transistor (HEMT) [8,9], and the heterojunction bipolar transistor (HJBT) [10].
This work was sponsored by the Defense Advanced Research Projects Agency and the Department of the Air Force.
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Murphy, R.A. (1985). Permeable Base Transistor. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_6
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DOI: https://doi.org/10.1007/978-3-642-70780-3_6
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