Abstract
The potential of high speed and large information capacity of optical systems has initiated much interest in optical device research[1,2,3]. A variety of bulk optical semiconductor bistable devices have been demonstrated[2]. Further, multiple-quantum-well (MQW) structures have been shown to have nonlinear properties which will be useful in device applications[3,4,5]. We have observed modulation of radiation at wavelength λ1 (below and near the bandgap), induced by a second radiation at wavelengtn λ2 (above the bandgap) in Semi-Insulating GaAs (SI GaAs) in the presence of electric fields. This effect could potentially be used to obtain AND gate optical logic function. This property is expected to exist in other direct bandgap III–V compound semiconductors such as InP and to much larger extent in MQW structures. Here we discuss some of the results obtained during the experimental investigation on SI GaAs.
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© 1985 Springer-Verlag Berlin Heidelberg
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Walpita, L.M., Chang, W.S.C., Wieder, H.H., Van Eck, T.E. (1985). Modulation of an Optical Beam by a Second Optical Beam in Biased Semi-Insulating GaAs. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_34
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DOI: https://doi.org/10.1007/978-3-642-70780-3_34
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