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New High-Speed Quantum Well and Variable Grap Superlattice Devices

  • Conference paper
Picosecond Electronics and Optoelectronics

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 21))

Abstract

Recent advances in high speed electronic and optoelectronic heterojunction devices are discussed. These include variable gap base transistors, new resonant tunneling transistors with quantum wells in the base regions and high-low avalanche detectors with superlattice grading regions.

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Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, NJ, 07974, USA

    Federico Capasso

Authors
  1. Federico Capasso
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Editor information

Editors and Affiliations

  1. Department of Physics, The University of Rochester, Rochester, NY, 14627, USA

    Gerard Albert Mourou

  2. Edward L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA

    David M. Bloom

  3. Department of Electrical Engineering, University of Maryland, College Park, MD, 20742, USA

    Chi-H. Lee

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© 1985 Springer-Verlag Berlin Heidelberg

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Capasso, F. (1985). New High-Speed Quantum Well and Variable Grap Superlattice Devices. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_22

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  • DOI: https://doi.org/10.1007/978-3-642-70780-3_22

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-70782-7

  • Online ISBN: 978-3-642-70780-3

  • eBook Packages: Springer Book Archive

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