Abstract
We have modeled the dispersion and loss of pulses on microstrip transmission line interconnections on silicon integrated-circuit substrates. Geometric dispersion and conductor linewidth, as well as losses from conductor resistance, conductor skin effect, and substrate conductance are considered over the frequency range from 100 MHz to 100 GHz. Results show the enormous significance of the substrate losses, and demonstrate the need for substrate resistivities >10 Ω-cm for high performance circuits. The results also show the effects of geometric dispersion for frequencies above 10 GHz and the unimportance of conductor skin-effect losses for frequencies up to 100 GHz.
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© 1985 Springer-Verlag Berlin Heidelberg
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Goossen, K.W., Hammond, R.B. (1985). Modeling of Picosecond Pulse Propagation on Silicon Integrated Circuits. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_13
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DOI: https://doi.org/10.1007/978-3-642-70780-3_13
Publisher Name: Springer, Berlin, Heidelberg
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