Velocity—Field Characteristics of a Silicon MOSFET

Abstract

In this chapter we will study the motion of a quasi-two-dimensional electron gas residing in the conduction channel established in the inversion layer of a p-type silicon (Si) MOSFET due to a positive gate voltage (see Fig. 11.1). When an positive voltage is applied between source and drain, all electrons in the channel acquire a drift velocity due to the lateral, driving electric field. The major goal is now to derive the relation between the electron drift velocity and the electric field. For the sake of simplicity, we will make three approximations.