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New Memory Organizations for 3D DRAM and PCMs

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Architecture of Computing Systems – ARCS 2012 (ARCS 2012)

Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 7179))

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Abstract

The memory wall (the gap between processing and storage speeds) remains a concern to computer systems designers. Caches have played a key role in hiding the performance gap by keeping recently accessed information in fast memories closer to the processor. Multi and many core systems are placing severe demands on caches, exacerbating the performance disparity between memory and processors. New memory technologies including 3D stacked DRAMs, solid state disks (SSDs) such as those built using flash technologies and phase change memories (PCM) may alleviate the problem: 3D DRAMs and SSDs present lower latencies than conventional, off-chip DRAMs and magnetic disk drives. However these technologies force us to rethink how address spaces should be organized into pages and how virtual addresses should be translated into physical pages. In this paper, we present some preliminary ideas in this connection, and evaluate these new organizations using SPEC CPU2006 benchmarks.

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Andreas Herkersdorf Kay Römer Uwe Brinkschulte

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© 2012 Springer-Verlag Berlin Heidelberg

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Fawibe, A., Sherman, J., Kavi, K., Ignatowski, M., Mayhew, D. (2012). New Memory Organizations for 3D DRAM and PCMs. In: Herkersdorf, A., Römer, K., Brinkschulte, U. (eds) Architecture of Computing Systems – ARCS 2012. ARCS 2012. Lecture Notes in Computer Science, vol 7179. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28293-5_17

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  • DOI: https://doi.org/10.1007/978-3-642-28293-5_17

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-28292-8

  • Online ISBN: 978-3-642-28293-5

  • eBook Packages: Computer ScienceComputer Science (R0)

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