Abstract
Many applications of GaN-based laser diodes require a stable output in pulsed or fast modulated operation and a high output power. Self-heating of the devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser diodes.
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References
Nichia Corporation, Data sheet NDHB510APA, http://www.nichia.co.jp/specification/en/product/ld/NDHB510APA-E.pdf
L.A. Coldren, S.W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)
C. Eichler, S. Schad, M. Seyboth, F. Habel, M. Scherer, S. Miller, A. Weimar, A. Lell,V. Härle, D. Hofstetter, Time resolved study of laser diode characteristics during pulsed operation. Physica Status Solidi C 0(7), 2283 (2003)
G.M. Laws, E.C. Larkins, I. Harrison, C. Molloy, D. Somerford, Improved refractive index formulas for the Al. J. Appl. Phys. 89(2), 1108–1115 (2001)
Y.P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica 34(1), 149 (1967)
B.W. Hakki, T.L. Paoli, cw degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain. J. Appl. Phys. 44(9), 4113 (1973)
W.G. Scheibenzuber, U.T. Schwarz, Fast self-heating in GaN-based laser diodes. Appl. Phys. Lett. 98, 181110 (2011)
B. Schmidtke, H. Braun, U.T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, U. Strauss, Time resolved measurement of longitudinal mode competition in 405 nm (Al, In)GaN laser diodes. Physica Status Solidi C 6, S860–S863 (2009)
Q. Shan, Q. Dai, S. Chhajed, J. Cho, E.F. Schubert, Analysis of thermal properties of GaInN light-emitting diodes and laser diodes. Journal 108, 084504 (2010)
H. Morkoc, Handbook of Nitride Semiconductors and Devices: Materials Properties 1 Physics and Growth (Wiley-VCH, Weinheim, 2008)
M. Mueller, M. Rattunde, G. Kaufel, J. Schmitz, J. Wagner, Short-pulse high-power operation of GaSb-based diode lasers. IEEE Photonics Technol. Lett. 21(23), 1770–1772 (2009)
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Scheibenzuber, W.G. (2012). Thermal Properties. In: GaN-Based Laser Diodes. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-24538-1_3
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DOI: https://doi.org/10.1007/978-3-642-24538-1_3
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