Abstract
In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET’s DC characteristics including the on- and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.
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Acknowledgements
This work was supported in part by Taiwan National Science Council (NSC) under Contract NSC-97-2221-E-009-154-MY2 and NSC-99-2221-E-009-175.
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Li, Y., Chen, YC. (2012). Inverse Doping Profile of MOSFETs via Geometric Programming. In: Michielsen, B., Poirier, JR. (eds) Scientific Computing in Electrical Engineering SCEE 2010. Mathematics in Industry(), vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-22453-9_37
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DOI: https://doi.org/10.1007/978-3-642-22453-9_37
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