Abstract
In thermodynamic nonequilibrium excess charges can be present in the semiconductor. They can be created by carrier injection through contacts, an electron beam or the absorption of light with wavelength smaller than the band gap. After the external excitation is turned off, the semiconductor will return to the equilibrium state. The relaxation of carriers into energetically lower states (and energy release) is called recombination. The term stems from the electron recombining with the hole created after absorption of a photon. However, there are other recombination mechanisms. A dedicated textbook is [646].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
P.R.C. Kent, A. Zunger, Phys. Rev. B 64, 115208 (2001)
V.A. Karasyuk, D.G.S. Beckett, M.K. Nissen, A. Villemarie, T.W. Steiner, M.L.W. Thewalt, Phys. Rev. B 49, 16381 (1994)
J.S. Blakemore, Phys. Rev. 163, 809 (1967)
H.B. Bebb, Phys. Rev. B 5, 4201 (1972)
G.R. James, A.W.R. Leitch, F. Omn`es, M.C. Wagener, M. Leroux, J. Appl. Phys. 96, 1047 (2004)
P.J. Dean, J. Lumin. 1–2, 398 (1970)
P.T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991)
G. G¨obel, Appl. Phys. Lett. 24, 492 (1974)
W. Michaelis, M. Pilkuhn, Phys. Stat. Sol. 36, 311 (1969)
X. Sun, J. Liu, L.C. Kimerling, J. Michel, Appl. Phys. Lett. 95, 011911 (2009)
R.N. Hall, Phys. Rev. 87, 387 (1952)
W. Shockley, W.T. Read, Phys. Rev. 87, 835 (1952)
V.K. Malyutenko, Physica E 20, 553 (2004)
J.F. Muth, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars, Appl. Phys. Lett. 71 2572 (1997)
W. Gerlach, H. Schlangenotto, H. Maeder, Phys. Stat. Sol. (A) 13, 277 (1972)
A. Galeskas, J. LSiCros, V. Grivickas, U. Lindefelt, C. Hallin, Proc. of the 7th International Conference on SiC, III-Nitrides and Related Materials, Stockholm (Sweden), 1997, pp. 533–36
V. Palankovski Simulation of Heterojunction Bipolar Transistors, PhD Thesis, Technische Universit¨at Wien, 2002
R.K. Akrenkiel, Minority-Carrier lifetime in III-V semiocnductors. Semicond. Semimet. 39, 39–150 (1993)
P.J. Dean, J.R. Haynes, W.F. Flood, Phys. Rev. 161, 711 (1967)
G. Davies, The opt0ical properties of luminescence centres in silicon, Phys. Rep. 176, 83 (1989)
G.D. Gilliland, Photoluminescence spectroscopy of crystalline semiconductors. Mat. Sci Engin. R 18, 99–400 (1997)
P.J. Dean, Luminescence of Crystals, Molecules and Solutions, ed. by F. Williams (Plenum, New York, 1973), p. 523
S. Permogorov, A. Reznitsky, A. Naumov, H. Stolz, W. von der Osten, J. Phys.: Condens. Matter 1, 5125 (1989)
T. Skettrup, M. Suffczynski, W. Gorzkowski, Phys. Rev. B 4, 512 (1971)
J.R. Haynes, Phys. Rev. Lett. 4, 361 (1960)
B. K. Meyer, H. Alves, D.M. Hofmann,W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strasburg, M. Dworzak, U. Haboeck, A.V. Rodina, Phys. Stat. Sol. (B) 241, 231 (2004)
P.J. Dean, M. Skolnick, J. Appl. Phys. 54, 346 (1983)
F.A.J.M. Driessen, H.G.M. Lochs, S.M. Olsthoorn, L.J. Giling, J. Appl. Phys. 69, 906 (1991)
R.G. Ulbrich, Solid State Electron. 21, 51 (1978)
D.E. Hill, Phys. Rev. B 1, 1863 (1970)
D.C. Reynolds, D.C. Look, B. Jogai, V.M. Phanse, R.P. Vaudo, Solid State Commun. 103, 533 (1997)
N. Nepal, M.L. Nakarmi, K.B. Nam, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 85, 2271 (2004)
D.G. Thomas, J.J. Hopfield, Phys. Rev. 128, 2135 (1962)
J.L. Merz, H. Kukimoto, K. Nassau, J.W. Shiever, Phys. Rev. B 6, 545 (1972)
P.J. Dean, D.C. Herbert, C.J. Werkhoven, B.J. Fitzpatrick, R.N. Bhargava, Phys. Rev. B 23, 4888 (1981)
B.K. Meyer, J. Sann, S. Lautenschl¨ager, M.R. Wagner, A. Hoffmann, Phys. Rev. B 76, 184120 (2007)
D. Karaiskaj, M.L.W Thewalt, T. Ruf, M. Cardona, H.-J. Pohl, G.G. Deviatych, P.G. Senniko, H. Riemann, Phys. Rev. Lett. 86, 6010 (2001)
D. Karaiskaj, M.L.W Thewalt, T. Ruf, M. Cardona, M. Konuma, Phys. Rev.Lett. 89, 016401 (2002)
S. M¨uller, D. Stichtenoth, M. Uhrmacher, H. Hofs¨ass, C. Ronning, J. R¨oder, Appl. Phys. Lett. 90, 012107 (2007)
V.A. Karasyuk, M.L.W Thewalt, S. An, E.C. Lightowlers, A.S. Kaminskii, Phys. Rev. B 54, 10 543 (1996)
M.L.W. Thewalt, A. Yang, M. Steger, D. Karaiskaj, M. Cardona, H. Riemann, N.V. Abrosimov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.J. Pohl, E.E. Haller, J.W. Ager III, K.M. Itoh, J. Appl. Phys. 101, 081724 (2007)
J.D. Cuthbert, D.G. Thomas, Phys. Rev. 154, 763 (1967)
J.P. Laurenti, P. Roentgen, K. Wolter, K. Seibert, H. Kurz, J. Camassel, Phys. Rev. B 37, 4155 (1988)
D. Bimberg, M. Sondergeld, E. Grobe, Phys. Rev. B 4, 3451 (1971)
V.D. Kulakovski˘ı, G.E. Pikus, V.B. Timofeev, Sov. Phys. Usp. 24, 815 (1981)
A.S. Kaminski˘ı, Ya.E. Pokrovski˘ı, Pis’ma Zh. Eksp. Teor. Fiz. 11, 381 (1970) [JETP Lett. 11, 255 (1970)]
M.L.W. Thewalt, Can. J. Phys. 55, 1463 (1977)
M.L.W. Thewalt, J.A. Rostworowski, G. Kirczenow, Can. J. Phys. 57, 1898 (1979)
D.G. Chtchekine, Z.C. Feng, S.J. Chua, G.D. Gilliland, Phys. Rev. B 63, 125211 (2001)
O. Goede, L. John, D. Hennig, Phys. Stat. Sol. (B) 89, K183 (1978)
E.F. Schubert, E.O. G¨obel, Y. Horikoshi, K. Ploog, H.J. Queisser, Phys. Rev. B 30, 813 (1984)
S. Heitsch, G. Zimmermann, D. Fritsch, C. Sturm, R. Schmidt-Grund, C. Schulz, H. Hochmuth, D. Spemann, G. Benndorf, B. Rheinl¨ander, Th. Nobis, M. Lorenz, M. Grundmann, J. Appl. Phys. 101, 083521 (2007)
R. Zimmermann, J. Cryst. Growth 101, 346 (1990)
J.M Langer, R. Buczko, A.M. Stoneham, Semicond. Sci. Technol. 7, 547 (1992)
M. Grundmann, C.P. Dietrich, J. Appl. Phys. 106, 123521 (2009)
A. M¨uller, M. St¨olzel, G. Benndorf, M. Lorenz, M. Grundmann, J. Appl. Phys. 107, 013704 (2010)
M.C. Wagener, G.R. James, A.W.R. Leitch, F. Omn`es, Phys. Stat. Sol. (C) 1, 2322 (2004)
B. Segall, G.D. Mahan, Phys. Rev. 171, 935 (1968)
J. Conradi, R.R. Haering, Phys. Rev. Lett. 20, 1344 (1968)
Y.S. Park, J.R. Schneider, Phys. Rev. Lett. 21, 798 (1968)
D. Kovalev, B. Averboukh, D. Volm, B.K. Meyer, H. Amano, I. Akasaki, Phys. Rev. B 54, 2518 (1996)
S. Permogorov, Optical Emission due to Exciton Scattering by LO Phonons in Semiconductors in Excitons, ed. by E.I. Rashba, M.D. Sturge (North-Holland, 1982)
M. Wojdak, A. Wysmołek, K. Pakuła, J.M. Baranowski, Phys. Stat. Sol. (B) 216, 95 (1999)
R. Dingle, Phys. Rev. Lett. 23, 579 (1969)
Th. Agne, Identifikation und Untersuchung von Defekten in ZnO Einkristallen, PhD Thesis, Universit¨at des Saarlandes, Saarbr¨ucken, 2004
K. Huang, A. Rhys, Proc. Roy. Soc. London A 204, 406 (1950)
J.J. Hopfield, J. Phys. Chem. Solids 10, 110 (1959)
M. Lax, J. Chem. Phys. 20, 1752 (1952)
J.L. Merz, Phys. Rev. 176, 961 (1968)
C. Klingshirn, Phys. Stat. Sol. (B) 71, 547 (1975)
P.J. Dean, C.H. Henry, C.J. Frosch, Phys. Rev. 168, 812 (1968)
W.H. Koschel, U. Kaufmann, S.G. Bishop, Solid State Commun. 21, 1069 (1977)
A. Juhl, Calorimetrische Absorptionsspektroskopie (CAS) – Eine neueMethode zur Charakterisierung der optischen Eigenschaften von Halbleitersystemen, PhD Thesis, Technische Universit¨at Berlin, 1987
M. Takeshima, Phys. Rev. B 23, 6625 (1981)
M. Takeshima, Phys. Rev. B 30, 3302 (1984)
P.C. Findlay, C.R. Pidgeon, H. Pellemans, R. Kotitschke, B.N. Murdin, T. Ashley, A.D. Johnson, A.M. White, C.T. Elliott, Semicond. Sci. Technol. 14, 1026 (1999)
D. Vignaud, J.F. Lampin, E. Lefebvre, M. Zaknoune, F. Mollot, Appl. Phys. Lett. 80, 4151 (2002)
D.B. Laks, G.F. Neumark, S.T. Pantelides, Phys. Rev. B 42, 5176 (1990)
P. Blood, J. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, San Diego, 1992)
D. Macdonald, A. Cuevas, Phys. Rev. B 67, 075203 (2003)
D.H. Auston, Semicond. Semimet. 28, 85 (1990)
A.A. Istratov, E.R. Weber, Appl. Phys. A 66, 123 (1998)
A.A. Istratov, H. Hieslmair, E.R. Weber, Appl. Phys. A 70, 489–534 (2000)
J.S. Blakemore, Phys. Rev. 110, 1301 (1958)
M.S. Tyagi, R. van Overstraeten, Solid State Electron. 26, 577 (1983)
G. Bemski, Phys. Rev. 100, 523 (1955)
J. Frenkel, Phys. Rev. 54, 647 (1938)
S. Bothra, S. Tyagi, S. K. Chandhi, J. M. Borrego, Solid State Electron. 34, 47 (1991)
K. Kurita, T. Shingyouji, Jpn. J. Appl. Phys. (Part 1) 38, 5710 (1999)
M.J. Kerr, J. Schmidt, A. Cuevas, J.H. Bultman, J. Appl. Phys. 89, 3821 (2001)
O. Hahneiser, M. Kunst, J. Appl. Phys. 85, 7741 (1999)
D.E. Aspnes, Surf. Sci. 132, 406 (1983)
C. Donolato, J. Appl. Phys. 54, 1314 (1983)
T. Kieliba, S. Riepe, W. Warta, J. Appl. Phys. 100, 063706 (2006)
J. Palm, J. Appl. Phys. 74, 1169 (1993)
A.D. Kurtz, S.A. Kulin, B.L. Averbach, Phys. Rev. 101, 1285 (1956)
E.A. Fitzgerald, D.G. Ast, P.D. Kirchner, G.D. Pettit, J.M. Woodall, J. Appl. Phys. 63, 693 (1988)
M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull, J. Appl. Phys. 66, 2214 (1989)
T.F. Ciszek, T.H. Wang, R.W. Burrows, X. Wu, J. Alleman, Y.S. Tsuo, T. Bekkedahl, 23th IEEE Photovoltaic Specialists Conf. Rec., IEEE, New York, 1993, p. 101
R. Corkish, T. Puzzer, A.B. Sproul, K.L. Luke, J. Appl. Phys. 84, 5473 (1998)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2010 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Grundmann, M. (2010). Recombination. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13884-3_10
Download citation
DOI: https://doi.org/10.1007/978-3-642-13884-3_10
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-13883-6
Online ISBN: 978-3-642-13884-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)