Abstract
In the previous chapter the design of receivers in CMOS and SiGe technologies has been presented. As explained there, the main advantage of CMOS is the possibility of highest integration with analog and digital circuitry. High integration may contribute to a considerable cost reduction of the module by reducing the amount of required discrete components and thus the BOM costs, as well as to a much lower module assembly and functionality verification costs. Therefore, the further circuit development towards a highly-integrated low-cost radar module is considered here in CMOS technology. This chapter describes the integration of the receiver and transmitter paths into a single 24 GHz transceiver chip.
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Issakov, V. (2010). Radar Transceiver Circuits. In: Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13598-9_7
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DOI: https://doi.org/10.1007/978-3-642-13598-9_7
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