Abstract
Accurate modeling of components is essential for circuit design at microwave frequencies. Particular care is required during the design stage in order to consider the necessary parasitic effects. In the designs throughout this work all the passive components and the on-chip interconnects, including the pads and the transmission lines leading to the active components, are carefully simulated using the 2.5D fieldsolver SonnetEM. The obtained S-parameter models of the metallization are then included in simulations in Agilent‘s Advanced Design System (ADS). However, using S-parameter models in time-domain simulations often leads to convergence and causality issues. Therefore, in some cases lumped element equivalent circuits are used instead of the frequency based data to model passive on-chip components. This requires techniques to fit accurately frequency dependent S-parameters to an equivalent circuit in a given frequency range.
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Issakov, V. (2010). Modeling Techniques. In: Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13598-9_4
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DOI: https://doi.org/10.1007/978-3-642-13598-9_4
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