Abstract
In Chaps. 3, 4, and 7, the thermoelectric power under strong magnetic field has been studied from SLs having various band structures assuming that the band structures of the constituent materials are invariant quantities in the presence of external photoexcitation. In this chapter, this assumption has been removed and in Sect. 10.2.1, an attempt is made to study the optothermoelectric power under large magnetic field inQWeffectivemass SL of optoelectronicmaterials. In Sect. 10.2.2, the same inQD effectivemass SLs of optoelectronicmaterials has been investigated. In Sect. 10.2.3, an attempt is made to investigate the optothermoelectric power under large magnetic field in QW SLs with graded interfaces of optoelectronic materials. In Sect. 10.2.4, the same in QD SLs with graded interfaces of optoelectronic materials has been studied. Sections 10.3 and 10.4 contain the results and discussion and open research problems, respectively.
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References
K.P. Ghatak, S. Bhattacharya, D. De, Photoemission from Optoelectronic Materials and Their Nanostructures, Springer Series in Nanostructure Science and Technology (Springer, New York, USA, 2009)
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Ghatak, K.P., Bhattacharya, S. (2010). Optothermoelectric Power in Quantum-Confined Semiconductor Superlattices of Optoelectronic Materials Under Large Magnetic Field. In: Thermoelectric Power in Nanostructured Materials. Springer Series in Materials Science, vol 137. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-10571-5_10
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DOI: https://doi.org/10.1007/978-3-642-10571-5_10
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