Abstract
In chemical vapor deposition (CVD) the compounds of a vapor phase, often diluted with an inert carrier gas, react at a hot surface to deposit a solid film [1, 2]. The importance of CVD is due to the versatility for depositing a large variety of elements and compounds at relatively low temperatures and at atmospheric pressure. Amorphous, polycrystalline, epitaxial, and uniaxially oriented polycrystalline films can be deposited with a high degree of purity. Aspects of CVD include the chemical reactions involved, the thermodynamics and kinetics of the reactors, and the transport of material and energy to and from the reaction site.
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Frey, H. (2015). Chemical Vapor Deposition (CVD). In: Frey, H., Khan, H.R. (eds) Handbook of Thin-Film Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-05430-3_9
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DOI: https://doi.org/10.1007/978-3-642-05430-3_9
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