Zusammenfassung
Consider the following reactions:
where U, V, W and Z are molecules. The reactions are denominated elementarily, if they occur in one step. This means all molecules in a), b) must collide at the same time, and/or in c) the decomposition “in a step” must take place. Reaction a) is in all probability not an elementary reaction, since five molecules must collide at the same time. For the reactions b) 2; an elementary reaction is conceivable:
likewise for reaction c):
On the other hand, it is well known that the following reaction is not elementary:
This reaction corresponds to b). From this it follows that on the basis of the stoichiometric equations a)–c) it cannot decided whether a reaction is elementary or not. However, chemical reactions can be divided into different basic steps:
-
1.
Unimolecular reactions:
$$\mathrm{U}\rightarrow\text{final products}.$$ -
2.
Bimolecular reactions:
$$\mathrm{U}+\mathrm{V}\rightarrow\text{final products}.$$
At high pressure triple molecular reactions can also occur:
In low pressure plasmas the reactions are usually complex. By means of the so-called stoichiometric coefficients the reaction rates can be defined. The reaction rates for reactants (U, V in Eq. (5.1)) are negative, for products positive:
here
- n j :
-
is volume density of molecules at the jth component.
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References
Schlichting, H.: Methoden und Mechanismen der thermischen Desorption: Adsorptions-, Desorptions-Kinetik, Epitaxie und Ordnung von Edelgasschichten auf Ru(001). Im Fachbereich Physik der Technischen Universität München eingereichte Dissertation. München: 1990.
Christmann K (1991) Introduction to Surface Physical Chemistry. Springer, New York
Demtröder W (2000) Atome, Moleküle und Festkörper Experimentalphysik, vol. 3. Springer, Berlin, Heidelberg, New York, Barcelona, Hongkong, London, Mailand, Paris, Singapur, Tokio
Henzler M (1994) Oberflächenphysik des Festkörpers. Teubner, Stuttgart
Bean, F. E.: Anisotropic etching of silicon, IEEE Trans. Electron.Devices ED-25, No. 10, pp. 1185–1193 (Okt. 1978)
McCracken RJ (1975) The behaviour of surfaces under ion bombardement. RepProgPhys 38(2):241–327
Behrisch R, Eckstein W (eds) (2007) Sputtering by Particle Bombardment: Experiments and Computer Calculations from Threshold to M $$\mathrm{e\kern-0.7ptV}$$ Energies. Springer, Berlin
Duke CB, Park RL (1972) Surface structure – An emering spectroscopy. Phys Today 25(8):23–28
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Frey, H. (2015). Gaseous Phase and Surface Processes. In: Frey, H., Khan, H.R. (eds) Handbook of Thin-Film Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-05430-3_5
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