Abstract
In this first chapter we consider, using a powerful technique such as Raman scattering, structural changes induced by light and heat treatment in vacuum-deposited amorphous chalcogenide films prepared by thermal evaporation at different rates. The changes in the Raman spectra of thermally evaporated amorphous As2S3 films after light treatment are interpreted in terms of rearrangement of bonding configurations of molecular species that exist just after evaporation. As the evaporation temperature or deposition rate is increased, irradiation with bandgap light, As-enriching and/or further annealing of the films induces the formation of microcrystallites. At the same time, the reversible photoinduced changes in annealed films involve negligibly small changes in bonding statistics. Discernable change occurs in the medium-range order.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
A. Madan, M.P. Shaw, The Physics and Applications of Amorphous Semiconductors(Academic, Boston, MA, 1988)
A. Feltz, Amorphous Inorganic Materials and Glasses (VCH, Weinheim, Germany, 1993)
S.O. Kasap, in Handbook of Imaging Materials, 2nd edn., ed. by A.S. Diamond, D.S. Weiss (Marcel Dekker, New York, 2002) p. 329, and references therein
K. Tanaka, in Encyclopedia of Materials (Elsevier, Oxford, 2001) p. 1123
S.A. Solin, G.N. Papatheodorou, Phys. Rev. B 15, 2084 (1977)
R.J. Nemanich, G.A.N. Connell, T.N. Hayes, R.A. Street, Phys. Rev. B 12, 6900 (1978)
V.I. Mikla, Yu.M. Vysochanskij, A.A. Kikineshi, et al., Sov. Phys. J. 11, 73 (1983)
M. Frumar, A.P. Firth, P.J.S. Owen, Philos. Mag. B 50, 453 (1984)
M. Frumar, Z. Polak, Z. Cernosek, J. Non-Cryst. Solids 256/257, 105 (1999) 105
M.L. Slade, R. Zallen, Solid State Commun. 30, 387 (1975)
P.J.S. Even, M.L. Sik, A.E. Owen, Solid State Commun. 33, 1067 (1980)
U. Strom, T.P. Martin, Solid State Commun. 29, 527 (1979)
C.Y. Yang, D.E. Sayers, M.A. Paesler, Phys. Rev. B 36, 8122 (1987)
A. Bertoluzza, C. Fagnano, P. Monti, A. Semerano, J. Non-Cryst. Solids 29, 49 (1978)
I. Zitkovsky, P. Boolchand, J. Non-Cryst. Solids 114, 70 (1989)
K. Tanaka, Appl. Phys. Lett. 26, 243 (1975)
A.E. Owen, A.P. Firth, P.J.S. Ewen, Philos. Mag. B 52, 347 (1985)
A.J. Martin, W. Brenig, Phys. Stat. Solidi. B 63, 163 (1974)
R.J. Nemanich, Phys. Rev. B 16, 1655 (1977)
V.K. Malinovsky, A.P. Sokolov, Solid State Commun. 57, 757 (1986)
L. Gladen, S.R. Elliott, G.N. Greaves, J. Non-Cryst. Solids 106, 189 (1988)
G. Pfeiffer, M.A. Paesler, S.C. Agarwal, J. Non-Cryst. Solids 130, 111 (1991)
G. Lucovsky, M. Popescu (eds.), Non-Crystalline Materials for Optoelectronics (INOE, Bucharest, 2004)
K. Tanaka, in Handbook on Advanced Electronic and Photonic Materials and Devices, ed. by H.S. Nalwa (Academic, San Diego, CA, 2001)
V.M. Lyubin, M.L. Klebanov, Photo-Induced Metastability in Amorphous Semiconductors, Chap.6 (Wiley, Weinheim, 2003)
M.A. Popescu, Non-Crystalline Chalcogenides (Kluwer, Dordrecht, The Netherlands, 2000)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2010 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Mikla, V.I., Mikla, V.V. (2010). Effect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides. In: Metastable States in Amorphous Chalcogenide Semiconductors. Springer Series in Materials Science, vol 128. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02745-1_2
Download citation
DOI: https://doi.org/10.1007/978-3-642-02745-1_2
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-02744-4
Online ISBN: 978-3-642-02745-1
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)