Abstract
Generally, Si multicrystals, which are grown by a casting method using a crucible, contain many grain boundaries (GBs) and crystal grains with various orientations. Since the grain size has increased as a result of improving in the growth technique, instead of GBs, subgrain boundaries (sub-GBs) have become major defects acting as recombination centers for photogenerated carriers. In this chapter, the study of sub-GBs in Si multicrystals is comprehensively reviewed with the authors’ current results.
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Kutsukake, K., Usami, N., Fujiwara, K., Nakajima, K. (2009). Fundamental Understanding of Subgrain Boundaries. In: Nakajima, K., Usami, N. (eds) Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02044-5_6
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DOI: https://doi.org/10.1007/978-3-642-02044-5_6
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