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Nanoscale Materials Defect Characterisation

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Ion Beams in Nanoscience and Technology

Part of the book series: Particle Acceleration and Detection ((PARTICLE))

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Abstract

Nanoscale materials are characterized by the low dimensionality of their building blocks. A large interface area density with an interface area of the order of 1,000 cm2 is easily found in multiple quantum well structures with 1  μm thickness and a 2–5 nm period. Hence, the interface behaviour will dominate or have a crucial impact on the properties of these structures. Additional defects will be mostly located at such interfaces in the form of planar or surface defects.

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Author information

Authors and Affiliations

  1. Department of Physics, Instituto Tecnológico e Nuclear (ITN), EN. 10, 2686-953, Sacavém, Portugal

    Eduardo Alves

  2. Department of Physics, National University of Singapore, 117542, Singapore, Singapore

    Mark Breese

Authors
  1. Eduardo Alves
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  2. Mark Breese
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Corresponding author

Correspondence to Eduardo Alves .

Editor information

Editors and Affiliations

  1. Inst. Technology, University of Lund, Lund, 221 00, Sweden

    Ragnar Hellborg

  2. Dept. Physics, University of Jyväskylä, Jyväskylä, 40014, Finland

    Harry J. Whitlow

  3. Pacific Northwest National Laboratory, Richland, 99352, U.S.A.

    Yanwen Zhang

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Alves, E., Breese, M. (2009). Nanoscale Materials Defect Characterisation. In: Hellborg, R., Whitlow, H., Zhang, Y. (eds) Ion Beams in Nanoscience and Technology. Particle Acceleration and Detection. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-00623-4_14

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