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Scanning Tunneling Microscopy of the Si(111)-7×7 Surface and Adsorbed Ge Nanostructures

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Applied Scanning Probe Methods XII

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

In this chapter, we review advances towards a comprehensive understanding of the Si(111)-7×7 surface and adsorbed Ge nanostructures by scanning tunneling microscopy. We first present our recent results on the highest resolution STM imaging on Si(111)-7×7 surfaces, in which all the six rest atoms and 12 adatoms are resolved simultaneously with unprecedented high-contrast. In the second part, STM was used as an atomic manipulation tool to fabricate groove structures with atomically straight edges and uniform lateral size by extracting atoms one by one from the Si(111)-7×7 surfaces. The critical current under various voltages for fabricating such grooves is measured, and a modification mechanism is discussed. Lastly, the behaviors of various Ge nanostructures created on the Si(111)-7×7surface, ranging from the initial adsorption sites of single Ge atoms, to the evolution and aggregation patterns of Ge nanoclusters, and then to the formation of 2-D extended Ge islands are comprehensively investigated by STM experimental studies and theoretical calculations.

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Guo, H., Wang, Y., Gao, H. (2009). Scanning Tunneling Microscopy of the Si(111)-7×7 Surface and Adsorbed Ge Nanostructures. In: Bhushan, B., Fuchs, H. (eds) Applied Scanning Probe Methods XII. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85039-7_9

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