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Bulk Crystal Growth of Ternary III–V Semiconductors

  • Chapter
Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

Abstract

Ternary semiconductor substrates with variable bandgaps and lattice constants are key enablers for next-generation advanced electronic, optoelectronic, and photovoltaic devices. This chapter presents a comprehensive review of the crystal growth challenges and methods to grow large-diameter, compositionally homogeneous, bulk ternary III–V semiconductors based on As, P, and Sb compounds such as GaInSb, GaInAs, InAsP, AlGaSb, etc. The Bridgman and gradient freezing techniques are the most successfully used methods for growing ternary crystals with a wide range of alloy compositions. Control of heat and mass transport during the growth of ternary compounds is crucial for achieving high-quality crystals. Melt mixing and melt replenishment methods are discussed. The scale-up issues for commercial viability of ternary substrates is also outlined.

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Abbreviations

ACRT:

accelerated crucible rotation technique

BPS:

Burton–Prim–Slichter

CZ:

Czochralski

DI:

deionized

HB:

horizontal Bridgman

HF:

hydrofluoric acid

HGF:

horizontal gradient freezing

IR:

infrared

LEC:

liquid encapsulation Czochralski

LPE:

liquid-phase epitaxy

MBE:

molecular-beam epitaxy

MOCVD:

metalorganic chemical vapor deposition

MOCVD:

molecular chemical vapor deposition

MTDATA:

metallurgical thermochemistry database

NPL:

National Physical Laboratory

OMVPE:

organometallic vapor-phase epitaxy

PD:

Peltier interface demarcation

PD:

photodiode

PID:

proportional–integral–differential

RF:

radiofrequency

SHM:

submerged heater method

THM:

traveling heater method

VB:

valence band

VB:

vertical Bridgman

VGF:

vertical gradient freeze

pBN:

pyrolytic boron nitride

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  1. Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, 12180, Troy, NY, USA

    Partha S. Dutta

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    Govindhan Dhanaraj Dr.

  2. Department of Geology, University of Mysore, Manasagangotri, 570 006, Mysore, India

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    Michael Dudley Dr.

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Dutta, P.S. (2010). Bulk Crystal Growth of Ternary III–V Semiconductors. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_10

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