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2D Disordered Electronic System in the Presence of Strong Magnetic Field

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Physics of Zero- and One-Dimensional Nanoscopic Systems

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 156))

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Abstract

The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e 2=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).

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Author information

Authors and Affiliations

  1. Department of Physics, Visva-Bharati University, Santiniketan, 731 235, India

    S. Sil

  2. Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata, 700 064, India

    S. N. Karmakar

  3. Department of Math-Physics, Oranim — University of Haifa, Tivon, 36006, Israel

    Efrat Shimshoni

Authors
  1. S. Sil
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  2. S. N. Karmakar
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  3. Efrat Shimshoni
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Editor information

Editors and Affiliations

  1. Saha Institute of Nuclear Physics, Bidhannagar, 700064, Kolkata, India

    Sachindra Nath Karmakar , Santanu Kumar Maiti  & Jayeeta Chowdhury ,  & 

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Sil, S., Karmakar, S.N., Shimshoni, E. (2007). 2D Disordered Electronic System in the Presence of Strong Magnetic Field. In: Karmakar, S.N., Maiti, S.K., Chowdhury, J. (eds) Physics of Zero- and One-Dimensional Nanoscopic Systems. Springer Series in Solid-State Sciences, vol 156. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-72632-6_10

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