Abstract
We present a review of recent developments in hydrodynamical modeling of charge transport in semiconductors. We focus our attention on the models for Si and GaAs based on the maximum entropy principle which, in the framework of extended thermodynamics, leads to the definition of closed systems of moment equations starting from the Boltzmann transport equation for semiconductors.
Both the theoretical and application issues are examined.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2003 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Anile, A., Mascali, G., Romano, V. (2003). Recent Developments in Hydrodynamical Modeling of Semiconductors. In: Anile, A.M. (eds) Mathematical Problems in Semiconductor Physics. Lecture Notes in Mathematics, vol 1823. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-45222-5_1
Download citation
DOI: https://doi.org/10.1007/978-3-540-45222-5_1
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-40802-4
Online ISBN: 978-3-540-45222-5
eBook Packages: Springer Book Archive