Abstract
A new type of field effect transistor is developed and realized. It is based on ballistic transport of hot electrons in a short GaAs channel. The channel is restricted by two short period superlattices. The gate has a V-grove shape. The transconductance of this FET exceeds 1 Sm/mm.
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Friedland K.J., et al: Jpn. J. Appl. Phys. 37, 1340, 1997
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© 2006 Springer-Berlag Berlin Heidelberg
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Trofimov, V.T. et al. (2006). Field Effect Transistor Constructed of Novel Structure With Short-Period (GaAs)n/(AlAs)m Superlattice. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_52
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DOI: https://doi.org/10.1007/978-3-540-36588-4_52
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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