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Memristor Emulators: A Note on Modeling

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Advances in Memristors, Memristive Devices and Systems

Part of the book series: Studies in Computational Intelligence ((SCI,volume 701))

Abstract

In a recent publication (Yi et al. 2011) elucidating a possible scheme to write information reliably onto a memory crossbar, Hewlett Packard Labs researchers employed a thyristor-based circuit to emulate the off-to-on switching behaviour of a titanium oxide memristor. The use of a thyristor device allowed them to test inexpensively and reliably the functionalities of the closed-loop crossbar write circuitry by using conventional CMOS components. From a device modeling point of view, however, it is worthy to point out that the aforementioned emulator is not a genuine memristor. The aim of this paper is to demonstrate with an in-depth mathematical analysis that the model of the thyristor does not fall into the class of memristors. The modelling approach adopted in this work may be a source of inspiration for researchers willing to check whether other devices or circuits may be classified as memristors.

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Notes

  1. 1.

    Under quasi-static excitation, the voltage across the device is a single-valued function of the current through it.

  2. 2.

    The zener diode in each cell is equivalent to the parallel of two zener diodes, one employed within the circuit of the BS08D device, refer to Fig. 1, and one adopted to tune the voltage at which the emulator undergoes switching, as it may be evinced by inspection of Fig. 2.

  3. 3.

    Let us assume that the two terminals of a one-port made up of arbitrary linear and nonlinear circuit elements, as well as voltage and current sources, are closed onto a current-controlled memristor device. The waveform of the voltage v(t) associated with the current i(t) of any admissible signal pair (i(t), v(t)) measured from this circuit set-up must cross the time axis whenever \(i=0\). This property of a current-controlled memristor is known as coincident zero-crossing signature (Chua 2015).

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Acknowledgements

The support from EU COST Action IC1401 and Czech Science Foundation (grant no. \(14-19865\)S) are acknowledged. We also thank the Deutsche Forschung Gesellschaft (DFG) for their financial contribution to the research project “Locally active memristive data processing (LAMP)” under grant number \(TE 257/22-1\). L. Chua’s research is supported by AFOSR Grant FA 9550-13-1-0136.

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Authors and Affiliations

  1. Faculty of Electrical Circuit Theory and Information Technology, Department of Fundamentals of Electrical Circuit Theory and Electronics, Technische Universität Dresden, Dresden, Germany

    A. Ascoli & R. Tetzlaff

  2. Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, 94720, USA

    L. O. Chua

  3. HRL Laboratories, LLC, Malibu, CA, 90265, USA

    W. Yi

  4. Hewlett Packard Labs, Palo Alto, CA, 94304, USA

    R. S. Williams

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  1. A. Ascoli
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Correspondence to A. Ascoli .

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  1. Research and Development Centre, Vel Tech University Research and Development Centre, Chennai, India

    Sundarapandian Vaidyanathan

  2. Department of Physics, Aristotle University of Thessaloniki Department of Physics, Thessaloniki, Greece

    Christos Volos

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Ascoli, A., Tetzlaff, R., Chua, L.O., Yi, W., Williams, R.S. (2017). Memristor Emulators: A Note on Modeling. In: Vaidyanathan, S., Volos, C. (eds) Advances in Memristors, Memristive Devices and Systems. Studies in Computational Intelligence, vol 701. Springer, Cham. https://doi.org/10.1007/978-3-319-51724-7_1

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