Abstract
In this work, we provide results of studies devoted to nano-sensors based on doped two-dimensional silicon nanotransistors and p-n nanojunctions. Based on obtained results and analysis, we demonstrate that, under certain conditions, both these structures can be ultra-sensitive: nanotransistors can resolve single photons; whereas p-n nanojunctions are able to detect single charge. Detection mechanism, involving appearance of individual dopants and aspects related to the reduced dimensionality, has been proposed. Elaborated model can be successfully applied to nanotransistor- and nanojunction-based sensors.
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Nowak, R., Tyszka, K., Jablonski, R. (2017). Doped Two-Dimensional Silicon Nanostructures as a Platform for Next-Generation Sensors. In: Jabłoński, R., Szewczyk, R. (eds) Recent Global Research and Education: Technological Challenges. Advances in Intelligent Systems and Computing, vol 519. Springer, Cham. https://doi.org/10.1007/978-3-319-46490-9_21
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DOI: https://doi.org/10.1007/978-3-319-46490-9_21
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